{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,1]],"date-time":"2026-03-01T02:51:23Z","timestamp":1772333483791,"version":"3.50.1"},"reference-count":27,"publisher":"Wiley","issue":"8","license":[{"start":{"date-parts":[[2017,7,17]],"date-time":"2017-07-17T00:00:00Z","timestamp":1500249600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"funder":[{"DOI":"10.13039\/501100005702","name":"Akasaki Institute, Nagoya University","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100005702","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Status Solidi (b)"],"published-print":{"date-parts":[[2017,8]]},"abstract":"<jats:sec><jats:label\/><jats:p>We demonstrated how annealing of the sputtered AlN buffer layer (sp\u2010AlN) on <jats:italic>r<\/jats:italic>\u2010plane sapphire could be used to produce a high\u2010crystalline\u2010quality <jats:italic>a<\/jats:italic>\u2010plane GaN (<jats:italic>a<\/jats:italic>\u2010GaN). The sp\u2010AlN with large grains was confirmed by annealing at 1600\u2009\u00b0C in N<jats:sub>2<\/jats:sub> ambient, consequently its crystalline orientation and quality were significantly improved. Moreover, it was found that <jats:italic>a<\/jats:italic>\u2010GaN grown on annealed sp\u2010AlN showed better crystalline quality, including a reduction of basal stacking fault density, than <jats:italic>a<\/jats:italic>\u2010GaN grown on untreated sp\u2010AlN (as sputtered). The implication is that the <jats:italic>a<\/jats:italic>\u2010GaN growth method using annealed sp\u2010AlN is an effective way to obtain high crystalline quality.<\/jats:p><\/jats:sec>","DOI":"10.1002\/pssb.201600723","type":"journal-article","created":{"date-parts":[[2017,7,17]],"date-time":"2017-07-17T06:52:44Z","timestamp":1500274364000},"source":"Crossref","is-referenced-by-count":10,"title":["Annealing of the sputtered AlN buffer layer on <i>r<\/i>\u2010plane sapphire and its effect on <i>a<\/i>\u2010plane GaN crystalline quality"],"prefix":"10.1002","volume":"254","author":[{"given":"Daiki","family":"Jinno","sequence":"first","affiliation":[{"name":"Graduate School of Science and Technology Meijo University 1\u2010501, Shiogamaguchi Tempaku Nagoya 468\u20108502 Japan"},{"name":"R&amp;D Department Koito Manufacturing co., Ltd. 500, Kitawaki Shimizu Shizuoka 424\u20108764 Japan"}]},{"given":"Shunya","family":"Otsuki","sequence":"additional","affiliation":[{"name":"Graduate School 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