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The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 10<jats:sup>2<\/jats:sup> cm<jats:sup>2<\/jats:sup>\/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V\/dec and an on\/off current ratio of 10<jats:sup>7<\/jats:sup>. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors. (\u00a9 2007 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssr.200600049","type":"journal-article","created":{"date-parts":[[2006,10,30]],"date-time":"2006-10-30T20:30:42Z","timestamp":1162240242000},"source":"Crossref","is-referenced-by-count":165,"title":["Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm<sup>2<\/sup>\/Vs"],"prefix":"10.1002","volume":"1","author":[{"given":"E.","family":"Fortunato","sequence":"first","affiliation":[]},{"given":"P.","family":"Barquinha","sequence":"additional","affiliation":[]},{"given":"A.","family":"Pimentel","sequence":"additional","affiliation":[]},{"given":"L.","family":"Pereira","sequence":"additional","affiliation":[]},{"given":"G.","family":"Gon\u00e7alves","sequence":"additional","affiliation":[]},{"given":"R.","family":"Martins","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2006,11,2]]},"reference":[{"key":"e_1_2_3_2_2","unstructured":"H. L.Hartnagelet al. 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