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We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si\/SiO2 and SiO2\/HfO2 interfaces. Therefore, surface roughness and remote surface roughness cannot be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si\/SiO2 interface and SiO2 thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-\u03ba\/Metal gate technologies.<\/jats:p>","DOI":"10.1063\/1.4906199","type":"journal-article","created":{"date-parts":[[2015,1,15]],"date-time":"2015-01-15T18:00:19Z","timestamp":1421344819000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":3,"title":["Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-<i>\u03ba<\/i>\/SiO2 gate stacks"],"prefix":"10.1063","volume":"106","author":[{"given":"Y. 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