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By exploiting the in\u2010memory boolean exclusive OR (XOR) operation of single CRS devices, the Hamming Distance (HD) can be calculated if the center electrodes of multiple CRS cells are connected. This HD is linearly encoded in the voltage drop of the common electrode, and from it the result of a binary multiply\u2010accumulate operation can be calculated. A small\u2010scale demonstration is experimentally realized and the feasibility of the in\u2010memory computation concept is confirmed. A simulation study identifies the low resistance state (LRS) variability as the main reason for the variations in the output voltage. The application as a potential hardware accelerator for the inference step of binary neural networks is investigated. Therefore, a 1\u2010layer fully connected neural network is trained on a binarized version of the MNIST data set and the inference step of the test data set is simulated. 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