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These devices require all the memory circuit components to be flexible and stretchable, especially for the memory storage elements. Herein, a planar zigzag\u2010structured nitrogen\u2010doped picene is successfully constructed as the active layer to obtain resistive switching memory devices, which possess both robust mechanical flexibility and electrical reliability. Attributed to the large\u2010area film morphological uniformity, the nonvolatile flexible memory devices exhibit highly reproducible resistive switching behavior, accompanying with concentrated distributions of switching voltages and resistance states under repetitive conformal deformation operation. The insight gained from this work may afford new opportunities for realizing high\u2010performance wearable information storage electronics.<\/jats:p><\/jats:sec>","DOI":"10.1002\/aisy.202000155","type":"journal-article","created":{"date-parts":[[2020,10,16]],"date-time":"2020-10-16T01:47:09Z","timestamp":1602812829000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":11,"title":["Nonvolatile Flexible Memory Based on a Planar Zigzag\u2010Type Nitrogen\u2010Doped Picene"],"prefix":"10.1002","volume":"2","author":[{"given":"Yang","family":"Li","sequence":"first","affiliation":[{"name":"Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology  Suzhou Jiangsu 215009 China"},{"name":"School of Materials Science and Engineering Nanyang Technological University  Singapore 639798 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