{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,19]],"date-time":"2026-01-19T13:38:54Z","timestamp":1768829934688,"version":"3.49.0"},"reference-count":47,"publisher":"Wiley","issue":"6","license":[{"start":{"date-parts":[[2021,3,18]],"date-time":"2021-03-18T00:00:00Z","timestamp":1616025600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Intelligent Systems"],"published-print":{"date-parts":[[2021,6]]},"abstract":"<jats:sec><jats:label\/><jats:p>Resistance switching devices are potential candidates for future memory applications. However, sneak\u2010path current issues in crossbar array cause energy and heat dissipation, and it requires additional circuitry for mitigation. To address this, we introduce a hybrid device with functional oxide as bilayer of amorphous strontium titanium oxide (<jats:italic>a<\/jats:italic>\u2010STO) and vanadium oxide (<jats:italic>a<\/jats:italic>\u2010VO<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub>). High\u2010performance resistive switching material <jats:italic>a<\/jats:italic>\u2010STO is coupled with <jats:italic>a<\/jats:italic>\u2010VO<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub> having fast apolar threshold switching. The hybrid device gives performance equivalent to conventional one resistance switch and one selector architecture with stability of 6000 endurance cycles. Non\u2010linearity factor of the hybrid device is 4.8, which is slightly higher than only <jats:italic>a<\/jats:italic>\u2010STO device of 4.7. Using <jats:italic>I<\/jats:italic>\u2013<jats:italic>V<\/jats:italic> measurements, readout margin is calculated, which suggests integration into 10<jats:sup>4<\/jats:sup>\u2009\u00d7\u200910<jats:sup>4<\/jats:sup> array when 10% readout margin is considered at switching ratio of 8. Further, the selector effect using non\u2010zero\u2010crossing property of memristors, which reveals six times reduction in OFF current in the hybrid device, is quantified. Compositional analysis along the device cross\u2010section to understand elemental distribution and interface effects of two unique, multifaceted oxides is presented. As such, in the hybrid structure non\u2010linearity factor remains nearly constant, while the absolute value of non\u2010zero\u2010crossing current is reduced six times, which can reduce the overall sneak current in crossbars.<\/jats:p><\/jats:sec>","DOI":"10.1002\/aisy.202000222","type":"journal-article","created":{"date-parts":[[2021,3,18]],"date-time":"2021-03-18T23:25:11Z","timestamp":1616109911000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Amorphous Metal Oxide Bilayers to Avoid Sneak\u2010Path Currents for High\u2010Density Resistive Memory Arrays"],"prefix":"10.1002","volume":"3","author":[{"given":"Shruti","family":"Nirantar","sequence":"first","affiliation":[{"name":"Functional Materials and Microsystems Research Group and the Micro Nano Research Facility RMIT University  Melbourne VIC 3001 Australia"}]},{"given":"Md Ataur","family":"Rahman","sequence":"additional","affiliation":[{"name":"Functional Materials and Microsystems Research Group and the Micro Nano Research Facility RMIT University  Melbourne VIC 3001 Australia"}]},{"given":"Edwin","family":"Mayes","sequence":"additional","affiliation":[{"name":"RMIT Microscopy and Microanalysis Facility RMIT University  Melbourne VIC 3001 Australia"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4319-1081","authenticated-orcid":false,"given":"Madhu","family":"Bhaskaran","sequence":"additional","affiliation":[{"name":"Functional Materials and Microsystems Research Group and the Micro Nano Research Facility RMIT University  Melbourne VIC 3001 Australia"}]},{"given":"Sumeet","family":"Walia","sequence":"additional","affiliation":[{"name":"Functional Materials and Microsystems Research Group and the Micro Nano Research Facility RMIT University  Melbourne VIC 3001 Australia"},{"name":"School of Engineering RMIT University  Melbourne VIC 3001 Australia"}]},{"given":"Sharath","family":"Sriram","sequence":"additional","affiliation":[{"name":"Functional Materials and Microsystems Research Group and the Micro Nano Research Facility RMIT University  Melbourne VIC 3001 Australia"}]}],"member":"311","published-online":{"date-parts":[[2021,3,18]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"crossref","first-page":"9","DOI":"10.1007\/978-94-007-4491-2_2","volume-title":"Advances in Neuromorphic Memristor Science and Applications","author":"Kozma R.","year":"2012"},{"key":"e_1_2_8_3_1","doi-asserted-by":"crossref","unstructured":"Y.Cassuto S.Kvatinsky E.Yaakobi in2013 IEEE Int. Symp. on Information Theory IEEE Piscataway NJ2013 pp.156\u2013160.","DOI":"10.1109\/ISIT.2013.6620207"},{"key":"e_1_2_8_4_1","doi-asserted-by":"crossref","first-page":"56","DOI":"10.1016\/j.vlsi.2016.02.002","volume":"54","author":"Gao Y.","year":"2016","journal-title":"Integration"},{"key":"e_1_2_8_5_1","doi-asserted-by":"crossref","first-page":"687","DOI":"10.1109\/TNANO.2006.885016","volume":"5","author":"Mustafa J.","year":"2006","journal-title":"IEEE Trans. Nanotechnol."},{"key":"e_1_2_8_6_1","doi-asserted-by":"crossref","first-page":"425204","DOI":"10.1088\/0957-4484\/20\/42\/425204","volume":"20","author":"Vontobel P. O.","year":"2009","journal-title":"Nanotechnology"},{"key":"e_1_2_8_7_1","doi-asserted-by":"crossref","unstructured":"H.Manem G. S.Rose X.He W.Wang inProc. of the 20th Symp. on Great Lakes Symp. on VLSI ACM Providence RI2010 pp.287\u2013292.","DOI":"10.1145\/1785481.1785548"},{"key":"e_1_2_8_8_1","doi-asserted-by":"crossref","first-page":"176","DOI":"10.1016\/j.mejo.2012.10.001","volume":"44","author":"Zidan M. A.","year":"2013","journal-title":"Microelectron. J."},{"key":"e_1_2_8_9_1","doi-asserted-by":"crossref","first-page":"403","DOI":"10.1038\/nmat2748","volume":"9","author":"Linn E.","year":"2010","journal-title":"Nat. Mater."},{"key":"e_1_2_8_10_1","doi-asserted-by":"crossref","first-page":"113501","DOI":"10.1063\/1.3693392","volume":"100","author":"Yang J. J.","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"e_1_2_8_11_1","doi-asserted-by":"crossref","first-page":"757","DOI":"10.1049\/el.2012.1017","volume":"48","author":"Qureshi M. S.","year":"2012","journal-title":"Electron. Lett."},{"key":"e_1_2_8_12_1","doi-asserted-by":"crossref","first-page":"5438","DOI":"10.1021\/nl203206h","volume":"11","author":"Kim S.","year":"2011","journal-title":"Nano Lett."},{"key":"e_1_2_8_13_1","doi-asserted-by":"crossref","first-page":"1091","DOI":"10.1016\/j.rinp.2018.12.092","volume":"12","author":"G\u00fcl F.","year":"2019","journal-title":"Results Phys."},{"key":"e_1_2_8_14_1","doi-asserted-by":"crossref","first-page":"4022","DOI":"10.1109\/TED.2015.2492421","volume":"62","author":"Chen P.","year":"2015","journal-title":"IEEE Trans. Electron Devices"},{"key":"e_1_2_8_15_1","doi-asserted-by":"crossref","first-page":"227","DOI":"10.1002\/9781118958254.ch12","volume-title":"Emerging Nanoelectronic Devices","author":"Chen A.","year":"2014"},{"key":"e_1_2_8_16_1","doi-asserted-by":"crossref","first-page":"81","DOI":"10.1016\/j.mee.2011.12.006","volume":"93","author":"Shin J.","year":"2012","journal-title":"Microelectron. Eng."},{"key":"e_1_2_8_17_1","doi-asserted-by":"crossref","unstructured":"A.Siemon S.Menzel A.Chattopadhyay R.Waser ELinn in2015 IEEE Int. Symp. on Circuits and Systems (ISCAS) IEEE Piscataway NJ2015 pp.1338\u20131341.","DOI":"10.1109\/ISCAS.2015.7168889"},{"key":"e_1_2_8_18_1","doi-asserted-by":"crossref","first-page":"4068","DOI":"10.1038\/s41598-017-04529-4","volume":"7","author":"Park J.","year":"2017","journal-title":"Sci. Rep."},{"key":"e_1_2_8_19_1","doi-asserted-by":"crossref","first-page":"1012","DOI":"10.1109\/TVLSI.2011.2136443","volume":"20","author":"Fei W.","year":"2012","journal-title":"IEEE Trans. Very Large Scale Integration (VLSI) Systems"},{"key":"e_1_2_8_20_1","first-page":"8837","volume":"12","author":"Stefanovich G.","year":"2000","journal-title":"J. Phys.: Condens. Matter"},{"key":"e_1_2_8_21_1","doi-asserted-by":"crossref","first-page":"044502","DOI":"10.1063\/1.5006145","volume":"123","author":"Rupp J. A.","year":"2018","journal-title":"J. Appl. Phys."},{"key":"e_1_2_8_22_1","doi-asserted-by":"crossref","first-page":"1579","DOI":"10.1109\/LED.2011.2163697","volume":"32","author":"Son M.","year":"2011","journal-title":"IEEE Electron Device Lett."},{"key":"e_1_2_8_23_1","doi-asserted-by":"crossref","first-page":"978","DOI":"10.1049\/el:20010643","volume":"37","author":"Zhang K.","year":"2016","journal-title":"IEEE Electron Device Lett."},{"key":"e_1_2_8_24_1","doi-asserted-by":"crossref","first-page":"1900605","DOI":"10.1002\/aelm.201900605","volume":"5","author":"Nirantar S.","year":"2019","journal-title":"Adv. Electron. Mater."},{"key":"e_1_2_8_25_1","doi-asserted-by":"crossref","first-page":"4622","DOI":"10.1109\/TED.2018.2862917","volume":"65","author":"Chen C.","year":"2018","journal-title":"IEEE Trans. Electron Devices"},{"key":"e_1_2_8_26_1","doi-asserted-by":"crossref","unstructured":"L.Chih-Yang C.Ying-Chen G.Meiqi P.Chih-Hung J.Fu-Yuan T.Yi-Ting H.Cheng Chih W.Xiaohan C.Min-Chen C.Yao-Feng Z.Fei B.Fowler C.Kuan-Chang T.Tsung-Ming C.Ting-Chang Z.Yonggang S. M.Sze S.Banerjee J. CLee in2017 Int. Symp. on VLSI Technology Systems and Application (VLSI-TSA) IEEE Piscataway NJ2017 pp.1\u20132.","DOI":"10.1109\/VLSI-TSA.2017.7942474"},{"key":"e_1_2_8_27_1","doi-asserted-by":"crossref","first-page":"8586","DOI":"10.1039\/C7NR02305G","volume":"9","author":"Lin C.-Y.","year":"2017","journal-title":"Nanoscale"},{"key":"e_1_2_8_28_1","doi-asserted-by":"crossref","first-page":"249","DOI":"10.1149\/05807.0249ecst","volume":"58","author":"Radu I. P.","year":"2013","journal-title":"ECS Trans."},{"key":"e_1_2_8_29_1","doi-asserted-by":"crossref","first-page":"18","DOI":"10.1016\/j.dib.2018.09.087","volume":"21","author":"Ahmed T.","year":"2018","journal-title":"Data Brief"},{"key":"e_1_2_8_30_1","doi-asserted-by":"crossref","first-page":"280","DOI":"10.1016\/j.apmt.2018.03.003","volume":"11","author":"Ahmed T.","year":"2018","journal-title":"Appl. Mater. Today"},{"key":"e_1_2_8_31_1","doi-asserted-by":"crossref","first-page":"14690","DOI":"10.1039\/C7NR04372D","volume":"9","author":"Ahmed T.","year":"2017","journal-title":"Nanoscale"},{"key":"e_1_2_8_32_1","doi-asserted-by":"crossref","first-page":"505210","DOI":"10.1088\/0957-4484\/27\/50\/505210","volume":"27","author":"Nili H.","year":"2016","journal-title":"Nanotechnology"},{"key":"e_1_2_8_33_1","doi-asserted-by":"crossref","first-page":"1600201","DOI":"10.1002\/admi.201600201","volume":"3","author":"Li Y.","year":"2016","journal-title":"Adv. Mater. Interfaces"},{"key":"e_1_2_8_34_1","doi-asserted-by":"crossref","first-page":"3172","DOI":"10.1002\/adfm.201501019","volume":"25","author":"Nili H.","year":"2015","journal-title":"Adv. Funct. Mater."},{"key":"e_1_2_8_35_1","doi-asserted-by":"crossref","first-page":"6741","DOI":"10.1002\/adfm.201401278","volume":"24","author":"Nili H.","year":"2014","journal-title":"Adv. Funct. Mater."},{"key":"e_1_2_8_36_1","doi-asserted-by":"crossref","first-page":"411","DOI":"10.1002\/adma.200901493","volume":"22","author":"Shibuya K.","year":"2010","journal-title":"Adv. Mater."},{"key":"e_1_2_8_37_1","doi-asserted-by":"crossref","first-page":"312","DOI":"10.1038\/nmat1614","volume":"5","author":"Szot K.","year":"2006","journal-title":"Nat. Mater."},{"key":"e_1_2_8_38_1","doi-asserted-by":"crossref","first-page":"2000094","DOI":"10.1002\/aisy.202000094","volume":"2","author":"Rahman M. A.","year":"2020","journal-title":"Adv. Intell. Syst."},{"key":"e_1_2_8_39_1","doi-asserted-by":"crossref","first-page":"126","DOI":"10.1016\/j.apmt.2018.08.011","volume":"13","author":"Rahman M. A.","year":"2018","journal-title":"Appl. Mater. Today"},{"key":"e_1_2_8_40_1","doi-asserted-by":"crossref","first-page":"1427","DOI":"10.1109\/LED.2011.2161601","volume":"32","author":"Huang J.","year":"2011","journal-title":"IEEE Electron Device Lett."},{"key":"e_1_2_8_41_1","doi-asserted-by":"crossref","first-page":"1771","DOI":"10.1038\/ncomms2784","volume":"4","author":"Valov I.","year":"2013","journal-title":"Nat. Commun."},{"key":"e_1_2_8_42_1","doi-asserted-by":"crossref","first-page":"7326","DOI":"10.1021\/acsami.9b20585","volume":"12","author":"Rahman M. A.","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"e_1_2_8_43_1","doi-asserted-by":"crossref","first-page":"505210","DOI":"10.1088\/0957-4484\/27\/50\/505210","volume":"27","author":"Nili H.","year":"2016","journal-title":"Nanotechnology"},{"key":"e_1_2_8_44_1","doi-asserted-by":"crossref","first-page":"2251","DOI":"10.1088\/0957-4484\/16\/10\/047","volume":"16","author":"Amsinck C. J.","year":"2005","journal-title":"Nanotechnology"},{"key":"e_1_2_8_45_1","doi-asserted-by":"crossref","first-page":"4201","DOI":"10.1021\/nl801785b","volume":"8","author":"Willinger M.-G.","year":"2008","journal-title":"Nano Lett."},{"key":"e_1_2_8_46_1","doi-asserted-by":"crossref","first-page":"407","DOI":"10.1140\/epjb\/e2002-00244-4","volume":"28","author":"H\u00e9bert C.","year":"2002","journal-title":"Eur. Phys. J. B \u2013 Condens. Matter Complex Syst."},{"key":"e_1_2_8_47_1","doi-asserted-by":"crossref","first-page":"375705","DOI":"10.1088\/1361-6528\/aacee4","volume":"29","author":"Li S.","year":"2018","journal-title":"Nanotechnology"},{"key":"e_1_2_8_48_1","doi-asserted-by":"crossref","first-page":"17899","DOI":"10.1038\/s41598-017-17937-3","volume":"7","author":"Taha M.","year":"2017","journal-title":"Sci. Rep."}],"container-title":["Advanced Intelligent Systems"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/aisy.202000222","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/aisy.202000222","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/aisy.202000222","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,7]],"date-time":"2025-10-07T19:31:04Z","timestamp":1759865464000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/aisy.202000222"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,3,18]]},"references-count":47,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2021,6]]}},"alternative-id":["10.1002\/aisy.202000222"],"URL":"https:\/\/doi.org\/10.1002\/aisy.202000222","archive":["Portico"],"relation":{},"ISSN":["2640-4567","2640-4567"],"issn-type":[{"value":"2640-4567","type":"print"},{"value":"2640-4567","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,3,18]]},"assertion":[{"value":"2020-10-01","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2021-03-18","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"2000222"}}