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However, the operation speed, power consumption, and error rate of these devices are incompatible with complementary metal\u2212oxide\u2212semiconductor (CMOS) logic, and moreover, cascading of the devices is difficult. Herein, instead, a new voltage\u2010dominated magnetic logic\u2010memory device is proposed, with switching time of 300\u2009ps and power consumption of 150\u2009fJ, representing \u224810 times improvement compared with CMOS logic on the same scale. The device has a reliable output ratio of &gt;3000%, a low working magnetic field of &lt;10\u2009mT, and a low error rate of \u224810<jats:sup>\u22127<\/jats:sup>. Moreover, complex logic operations, such as XOR gates and a full adder, can be realized using this device via cascading. As a result of these advantages, the magnetic logic\u2010memory device is well suited for practical applications.<\/jats:p><\/jats:sec>","DOI":"10.1002\/aisy.202100157","type":"journal-article","created":{"date-parts":[[2022,1,27]],"date-time":"2022-01-27T07:36:22Z","timestamp":1643268982000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Ultrafast and Ultralow\u2010Power Voltage\u2010Dominated Magnetic Logic"],"prefix":"10.1002","volume":"4","author":[{"given":"Yuchen","family":"Pu","sequence":"first","affiliation":[{"name":"Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University  Beijing 100084 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ziyao","family":"Lu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University  Beijing 100084 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hongming","family":"Mou","sequence":"additional","affiliation":[{"name":"Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University  Beijing 100084 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xixiang","family":"Zhang","sequence":"additional","affiliation":[{"name":"Division of Physical Science and Engineering King Abdullah University of Science and Technology (KAUST)  Thuwal 239955 Kingdom of Saudi Arabia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6998-8243","authenticated-orcid":false,"given":"Xiaozhong","family":"Zhang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University  Beijing 100084 China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2022,1,27]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1145\/359576.359579"},{"key":"e_1_2_9_2_2","doi-asserted-by":"publisher","DOI":"10.1109\/MDT.2005.134"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.282.5394.1660"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201402955"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1142\/S2010324712400024"},{"key":"e_1_2_9_5_2","unstructured":"b)Z.Zhang Y.Zhang R.Wang L.Zeng R.Huang presented at2018 14th IEEE Int. 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