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Emerging technologies, such as in\u2010memory computing (IMC), provide a new way to overcome the limitations due to the separation of memory and computation. However, existing IMC efforts are generally limited to a single (gate\u2010control or drain\u2010control) mode of operation to achieve functionality. Herein, a 2D ferroelectric channel device that enables the feasibility of multioperation modes is proposed. In addition, rich functionalities, such as logic, nonvolatile memory, and neuromimetic plasticity modulation, by switching the operating modes are realized. 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