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However, the effect of strain on the resistance switching characteristics of the ferroelectric HZO thin\u2010film memristors has not been fully studied so far. In this work, the strain effects on the HZO thin\u2010film memristors are investigated. HZO films with different resistance properties are also prepared by controlling the value of oxygen pressure. Based on the testing results, it is proposed that the resistance switching behavior of HZO films may be caused by the joint participation between ferroelectricity and oxygen vacancy migration. The study also found that HZO films can successfully simulate learning behavior similar to the human brain. The applied pulses with a width of tens of nanoseconds timescale are beneficial to realize fast learning and computing. These results provide a fundamental and deep insight on HZO\u2010based ferroelectric semiconductor oxide thin\u2010film memristors and their potential applications in next\u2010generation artificial electronic synaptic devices.<\/jats:p><\/jats:sec>","DOI":"10.1002\/aisy.202100244","type":"journal-article","created":{"date-parts":[[2022,3,10]],"date-time":"2022-03-10T08:25:08Z","timestamp":1646900708000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":28,"title":["Controlling Resistance Switching Performances of Hf<sub>0.5<\/sub>Zr<sub>0.5<\/sub>O<sub>2<\/sub> Films by Substrate Stress and Potential in Neuromorphic Computing"],"prefix":"10.1002","volume":"4","author":[{"given":"Zuoao","family":"Xiao","sequence":"first","affiliation":[{"name":"National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices College of Electron and Information Engineering College of Pharmaceutical Science Key Laboratory of Pharmaceutical Quality Control of Hebei Province Hebei University  Baoding 071002 P. 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