{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,2]],"date-time":"2026-07-02T05:48:04Z","timestamp":1782971284819,"version":"3.54.5"},"reference-count":13,"publisher":"Wiley","issue":"8","license":[{"start":{"date-parts":[[2022,2,25]],"date-time":"2022-02-25T00:00:00Z","timestamp":1645747200000},"content-version":"am","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2022,2,25]],"date-time":"2022-02-25T00:00:00Z","timestamp":1645747200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/100011039","name":"Intelligence Advanced Research Projects Activity","doi-asserted-by":"publisher","award":["MicroE4AI"],"award-info":[{"award-number":["MicroE4AI"]}],"id":[{"id":"10.13039\/100011039","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Intelligent Systems"],"published-print":{"date-parts":[[2022,8]]},"abstract":"<jats:sec><jats:label\/><jats:p>Conventional resistive crossbar array for in\u2010memory computing suffers from high static current\/power, serious IR drop, and sneak paths. In contrast, the \u201ccapacitive\u201d crossbar array that harnesses transient current and charge transfer is gaining attention as it 1) only consumes dynamic power, 2) has no DC sneak paths and avoids severe IR drop (thus, selector\u2010free), and 3) can be fabricated on top of complementary metal\u2013oxide\u2013semiconductor (CMOS) circuits for 3D\u2010stacking. For the first time, ferroelectric Hf<jats:sub>0.5<\/jats:sub>Zr<jats:sub>0.5<\/jats:sub>O<jats:sub>2<\/jats:sub> (HZO) capacitive crossbar arrays are experimentally demonstrated. Asymmetry of the HZO electrode interfaces leads to small\u2010signal capacitance on\/off ratio &gt;110% that can achieve read\u2010disturb\u2010free operation. The vector matrix multiplication (VMM) experiments are conducted on the fabricated capacitive crossbar array, showing a linear weighted sum versus numbers of input or on\u2010state weight. The array\u2010level VMM operation could maintain weight pattern reprogramming after 1) thousands of 1\u2009ms\/3\u2009V pulses and 2) an extrapolated 10\u2010year retention at 85\u2009\u00b0C. Array\u2010level circuit simulation at 22\u2009nm node shows the energy consumption of a capacitive crossbar array is 20\u2013200\u00d7 lower than the resistive crossbar array counterpart. Moreover, analog\u2010shift\u2010and\u2010add circuits are designed for multibit weight summation, achieving 16.6% less area and 26.9% lower energy consumption than digital\u2010shift\u2010and\u2010add circuits.<\/jats:p><\/jats:sec>","DOI":"10.1002\/aisy.202100258","type":"journal-article","created":{"date-parts":[[2022,2,25]],"date-time":"2022-02-25T07:56:33Z","timestamp":1645775793000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":74,"title":["Nonvolatile Capacitive Crossbar Array for In\u2010Memory Computing"],"prefix":"10.1002","volume":"4","author":[{"given":"Jae","family":"Hur","sequence":"first","affiliation":[{"name":"School of Electrical and Computer Engineering Georgia Institute of Technology  791 Atlantic Dr. Atlanta GA 30332 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuan-Chun","family":"Luo","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering Georgia Institute of Technology  791 Atlantic Dr. Atlanta GA 30332 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Anni","family":"Lu","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering Georgia Institute of Technology  791 Atlantic Dr. Atlanta GA 30332 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tzu-Han","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering Georgia Institute of Technology  791 Atlantic Dr. Atlanta GA 30332 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shaolan","family":"Li","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering Georgia Institute of Technology  791 Atlantic Dr. Atlanta GA 30332 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Asif Islam","family":"Khan","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering Georgia Institute of Technology  791 Atlantic Dr. Atlanta GA 30332 USA"},{"name":"School of Materials Science and Engineering Georgia Institute of Technology  771 Ferst Dr. NW Atlanta GA 30332 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0068-3652","authenticated-orcid":false,"given":"Shimeng","family":"Yu","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering Georgia Institute of Technology  791 Atlantic Dr. Atlanta GA 30332 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2022,2,25]]},"reference":[{"key":"e_1_2_11_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2018.2790840"},{"key":"e_1_2_11_3_1","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2016.2546199"},{"key":"e_1_2_11_4_1","unstructured":"P.Jain U.Arslan M.Sekhar B. C.Lin L.Wei T.Sahu J.Alzate-vinasco A.Vangapaty M.Meterelliyoz N.Strutt A. B.Chen P.Hentges P. A.Quintero C.Connor O.Golonzka K.Fischer F.Hamzaoglu inIEEE Int. Solid- State Circuits Conf. - (ISSCC) IEEE Piscataway NJ2019 pp.212\u2013214."},{"key":"e_1_2_11_5_1","unstructured":"Y.-C.Luo A.Lu J.Hur L.Shaolan S.Yu inIEEE 11th Int. Memory Workshop (IMW) IEEE Piscataway NJ2021 pp.1\u20134."},{"key":"e_1_2_11_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-018-05677-5"},{"key":"e_1_2_11_7_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3072610"},{"key":"e_1_2_11_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2921737"},{"key":"e_1_2_11_9_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0018937"},{"key":"e_1_2_11_10_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2021.3108148"},{"key":"e_1_2_11_11_1","doi-asserted-by":"crossref","unstructured":"X.Peng S.Huang Y.Luo X.Sun S.Yu inIEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway NJ2019 p.32.5.1\u201332.5.4.","DOI":"10.1109\/IEDM19573.2019.8993491"},{"key":"e_1_2_11_12_1","doi-asserted-by":"crossref","unstructured":"J. G.Alzate U.Arslan P.Bai J.Brockman Y. J.Chen N.Das K.Fischer T.Ghani P.Heil P.Hentges R.Jahan A.Littlejohn M.Mainuddin D.Ouellette J.Pellegren T.Pramanik C.Puls P.Quintero T.Rahman M.Sekhar B.Sell M.Seth A. J.Smith A. K.Smith L.Wei C.Wiegand O.Golonzka F.Hamzaoglu inIEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway NJ2019 p.2.4.1\u20132.4.4.","DOI":"10.1109\/IEDM19573.2019.8993474"},{"key":"e_1_2_11_13_1","doi-asserted-by":"crossref","unstructured":"K.Ni B.Grisafe W.Chakraborty A. K.Saha S.Dutta M.Jerry J. A.Smith S.Gupta S.Datta inIEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway NJ2018 p.16.1.1\u201316.1.4.","DOI":"10.1109\/IEDM.2018.8614527"},{"key":"e_1_2_11_14_1","volume":"1","author":"Jiang H.","year":"2021","journal-title":"IEEE Design Test"}],"container-title":["Advanced Intelligent Systems"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/aisy.202100258","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/aisy.202100258","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/aisy.202100258","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/aisy.202100258","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,7]],"date-time":"2025-10-07T15:44:13Z","timestamp":1759851853000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/aisy.202100258"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,2,25]]},"references-count":13,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2022,8]]}},"alternative-id":["10.1002\/aisy.202100258"],"URL":"https:\/\/doi.org\/10.1002\/aisy.202100258","archive":["Portico"],"relation":{},"ISSN":["2640-4567","2640-4567"],"issn-type":[{"value":"2640-4567","type":"print"},{"value":"2640-4567","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,2,25]]},"assertion":[{"value":"2021-12-11","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2022-02-25","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"2100258"}}