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In addition, it is necessary to lower the operating current of the RRAM cell and enable gradual switching characteristics to mimic the low\u2010energy operations of biological. In most filamentary RRAMs, however, overshoot current occurs in the forming stage, and the RRAM shows large device variation, high operating current, and abrupt set and reset switching characteristics. Herein, the shortcomings occurring in the forming stage are overcome by introducing and optimizing an overshoot suppression layer. Consequently, the RRAM exhibits gradual switching characteristics both in the set and reset regions, thereby enabling implementation of 4\u2010bit multilevel operation. In addition, the forming step can be easily performed in a 16\u2009\u00d7\u200916 crossbar array owing to its self\u2010compliance characteristics without disturbing neighboring cells in the array. The tuning and vector\u2013matrix multiplication (VMM) operations are also experimentally verified in the array. Finally, classification performance with off\u2010chip training is compared in terms of accuracy and robustness to tuning tolerance depending on the number of bits of the implemented multiconductance levels.<\/jats:p>\n                  <\/jats:sec>","DOI":"10.1002\/aisy.202100273","type":"journal-article","created":{"date-parts":[[2022,5,26]],"date-time":"2022-05-26T03:59:55Z","timestamp":1653537595000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":63,"title":["4\u2010bit Multilevel Operation in Overshoot Suppressed Al\n                    <sub>2<\/sub>\n                    O\n                    <sub>3<\/sub>\n                    \/TiO\n                    <sub>\n                      <i>x<\/i>\n                    <\/sub>\n                    Resistive Random\u2010Access Memory Crossbar 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