{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T16:52:13Z","timestamp":1775494333287,"version":"3.50.1"},"reference-count":51,"publisher":"Wiley","issue":"6","license":[{"start":{"date-parts":[[2022,4,8]],"date-time":"2022-04-08T00:00:00Z","timestamp":1649376000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Science Foundation of China","doi-asserted-by":"publisher","award":["61904140"],"award-info":[{"award-number":["61904140"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","award":["JC2101"],"award-info":[{"award-number":["JC2101"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Intelligent Systems"],"published-print":{"date-parts":[[2022,6]]},"abstract":"<jats:sec><jats:label\/><jats:p>Nonvolatile resistive switching memristance devices with a high on\/off ratio are desirable for nanoelectronics such as resistive random\u2010access memory (RRAM) and in\u2010memory computing. Here, bipolar resistive switching in point\u2010contacted W\/LaAlO<jats:sub>3<\/jats:sub>\/SrTiO<jats:sub>3<\/jats:sub>(111) heterojunctions is reported, in which a Schottky barrier is formed at the metal\/oxides interface, and 2d electron gas is formed at the interface of perovskite oxides. A negative differential resistance is observed in the RESET process. The result shows that the observed resistive switching is strongly associated with oxygen\u2010vacancies (OVs) in oxides with dominating contributions from electron hopping between OV trap sites, and can be controlled by oxygen annealing and electron injection. Remarkably, a method is developed by continuous RESET processes to increase the high resistance state by 1\u20133 orders of magnitude, with an on\/off ratio enhanced from \u224810 to \u224810<jats:sup>4<\/jats:sup>. The work provides a promising pathway to understand conduction mechanism of oxides memristors and promote its application in RRAM and in\u2010memory computing.<\/jats:p><\/jats:sec>","DOI":"10.1002\/aisy.202200020","type":"journal-article","created":{"date-parts":[[2022,4,9]],"date-time":"2022-04-09T00:49:30Z","timestamp":1649465370000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["Controlling Memristance and Negative Differential Resistance in Point\u2010Contacted Metal\u2013Oxides\u2013Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping"],"prefix":"10.1002","volume":"4","author":[{"given":"Xin","family":"Gan","sequence":"first","affiliation":[{"name":"Low Dimensional Quantum Physics &amp; Device Group School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"},{"name":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"}]},{"given":"Yueying","family":"Zhang","sequence":"additional","affiliation":[{"name":"Low Dimensional Quantum Physics &amp; Device Group School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"},{"name":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"}]},{"given":"Yupeng","family":"Hui","sequence":"additional","affiliation":[{"name":"Low Dimensional Quantum Physics &amp; Device Group School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"},{"name":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"}]},{"given":"Shaoxuan","family":"Liu","sequence":"additional","affiliation":[{"name":"Low Dimensional Quantum Physics &amp; Device Group School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"},{"name":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"}]},{"given":"Lei","family":"Wang","sequence":"additional","affiliation":[{"name":"Low Dimensional Quantum Physics &amp; Device Group School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"},{"name":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"}]},{"given":"Jincheng","family":"Zhang","sequence":"additional","affiliation":[{"name":"Low Dimensional Quantum Physics &amp; Device Group School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"},{"name":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"},{"name":"Collaborative Innovation Center of Quantum Information of Shaanxi Province Xidian University  Xi'an 710071 China"}]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[{"name":"Low Dimensional Quantum Physics &amp; Device Group School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"},{"name":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"},{"name":"Collaborative Innovation Center of Quantum Information of Shaanxi Province Xidian University  Xi'an 710071 China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9880-7002","authenticated-orcid":false,"given":"Haijiao Harsan","family":"Ma","sequence":"additional","affiliation":[{"name":"Low Dimensional Quantum Physics &amp; Device Group School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"},{"name":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  2 South Taibai Road Xi'an 710071 China"},{"name":"Collaborative Innovation Center of Quantum Information of Shaanxi Province Xidian University  Xi'an 710071 China"}]}],"member":"311","published-online":{"date-parts":[[2022,4,8]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2014.2387353"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2015.29"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201905660"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.201900044"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.9b08189"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202070317"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.ceramint.2018.03.198"},{"key":"e_1_2_8_9_1","doi-asserted-by":"crossref","unstructured":"E.Covi S.Brivio A.Serb T.Prodromakis M.Fanciulli S.Spiga in2016 IEEE Int. Symp. on Circuits and Systems (ISCAS) IEEE2016 pp.393\u2013396.","DOI":"10.1109\/ISCAS.2016.7527253"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpclett.1c02105"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1007\/s10854-015-2848-z"},{"key":"e_1_2_8_12_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/abce7b"},{"key":"e_1_2_8_13_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4971188"},{"key":"e_1_2_8_14_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2021.149274"},{"key":"e_1_2_8_15_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201704725"},{"key":"e_1_2_8_16_1","doi-asserted-by":"publisher","DOI":"10.3390\/mi12010050"},{"key":"e_1_2_8_17_1","doi-asserted-by":"publisher","DOI":"10.1016\/S1369-7021(08)70119-6"},{"key":"e_1_2_8_18_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4963887"},{"key":"e_1_2_8_19_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0037416"},{"key":"e_1_2_8_20_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.abi6332"},{"key":"e_1_2_8_21_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0003590"},{"key":"e_1_2_8_22_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.75.121404"},{"key":"e_1_2_8_23_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4977834"},{"key":"e_1_2_8_24_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.1c06649"},{"key":"e_1_2_8_25_1","doi-asserted-by":"publisher","DOI":"10.1002\/admi.201700959"},{"key":"e_1_2_8_26_1","doi-asserted-by":"publisher","DOI":"10.1039\/C4CP04151H"},{"key":"e_1_2_8_27_1","doi-asserted-by":"publisher","DOI":"10.1038\/srep23299"},{"key":"e_1_2_8_28_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.116.257601"},{"key":"e_1_2_8_29_1","doi-asserted-by":"publisher","DOI":"10.1021\/am501387w"},{"key":"e_1_2_8_30_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2017.10.032"},{"key":"e_1_2_8_31_1","first-page":"041027","volume":"3","author":"Wu S.","year":"2013","journal-title":"Phys. Rev. X"},{"key":"e_1_2_8_32_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201004497"},{"key":"e_1_2_8_33_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/ab2c5d"},{"key":"e_1_2_8_34_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/aba6b4"},{"key":"e_1_2_8_35_1","first-page":"1900540","author":"Maznichenko I. V.","year":"2019","journal-title":"Phys. Status Solidi B"},{"key":"e_1_2_8_36_1","doi-asserted-by":"publisher","DOI":"10.1002\/admi.201701565"},{"key":"e_1_2_8_37_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.abe9053"},{"key":"e_1_2_8_38_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4939913"},{"key":"e_1_2_8_39_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.202000610"},{"key":"e_1_2_8_40_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2020.104981"},{"key":"e_1_2_8_41_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4961617"},{"key":"e_1_2_8_42_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl201821j"},{"key":"e_1_2_8_43_1","doi-asserted-by":"publisher","DOI":"10.1140\/epjst\/e2017-70059-7"},{"key":"e_1_2_8_44_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.124.146601"},{"key":"e_1_2_8_45_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.121.146802"},{"key":"e_1_2_8_46_1","doi-asserted-by":"publisher","DOI":"10.3390\/met11030440"},{"key":"e_1_2_8_47_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/abb505"},{"key":"e_1_2_8_48_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4939682"},{"key":"e_1_2_8_49_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2017.10.072"},{"key":"e_1_2_8_50_1","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3719\/8\/4\/003"},{"key":"e_1_2_8_51_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.124.017702"},{"key":"e_1_2_8_52_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.abh2716"}],"container-title":["Advanced Intelligent Systems"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/aisy.202200020","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/aisy.202200020","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/aisy.202200020","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,7]],"date-time":"2025-10-07T17:09:13Z","timestamp":1759856953000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/aisy.202200020"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,4,8]]},"references-count":51,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2022,6]]}},"alternative-id":["10.1002\/aisy.202200020"],"URL":"https:\/\/doi.org\/10.1002\/aisy.202200020","archive":["Portico"],"relation":{},"ISSN":["2640-4567","2640-4567"],"issn-type":[{"value":"2640-4567","type":"print"},{"value":"2640-4567","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,4,8]]},"assertion":[{"value":"2022-01-27","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2022-04-08","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"2200020"}}