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However, low switching speed, nonuniform device characteristics, and inefficient logic synthesis hinder the development of memristor\u2010based in\u2010memory computing. Herein, a novel Cu\/\u03b1\u2010Si\/\u03b1\u2010C\/Pt memristor and direct resistance\u2010coupling logic synthesis scheme to construct high\u2010efficiency in\u2010memory computing is presented. The memristor shows excellent uniformity of low\/high resistance (relative dispersion <jats:italic>\u03c3<\/jats:italic>\/\u03bc\u2009=\u20094.68% and 3.28%) and SET\/RESET voltage (relative dispersion <jats:italic>\u03c3<\/jats:italic>\/\u03bc\u2009=\u20093.24% and 5.85%), fast switching speed (\u224830\u2009ns), good endurance (&gt;10<jats:sup>8<\/jats:sup>), and long retention (&gt;10<jats:sup>5<\/jats:sup>\u2009s at 100\u2009\u00b0C). Complete set of Boolean logic and some derived logic operators are efficiently implemented in the Cu\/\u03b1\u2010Si\/\u03b1\u2010C\/Pt crossbar array. Furthermore, the reconfigurable and parallel logic synthesis is experimentally demonstrated by one\u2010bit full adder and parallel copy operation. 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