{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,9]],"date-time":"2026-05-09T22:06:34Z","timestamp":1778364394618,"version":"3.51.4"},"reference-count":38,"publisher":"Wiley","issue":"1","license":[{"start":{"date-parts":[[2022,12,20]],"date-time":"2022-12-20T00:00:00Z","timestamp":1671494400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001321","name":"National Research Foundation","doi-asserted-by":"publisher","award":["NRF-2022R1A2C1010447"],"award-info":[{"award-number":["NRF-2022R1A2C1010447"]}],"id":[{"id":"10.13039\/501100001321","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002642","name":"Korea University","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100002642","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Intelligent Systems"],"published-print":{"date-parts":[[2023,1]]},"abstract":"<jats:sec><jats:label\/><jats:p>A fast and precise threshold voltage (<jats:italic>V<\/jats:italic><jats:sub>th<\/jats:sub>) extraction method is required for the process design of electronic systems using metal\u2013oxide\u2013semiconductor field\u2010effect transistors (MOSFETs) and its immediate on\u2010site analysis during fabrication. The selection of a suitable <jats:italic>V<\/jats:italic><jats:sub>th<\/jats:sub> extraction method is a complicated task because it involves a trade\u2010off between accuracy and simplicity according to the device scheme. Herein, an automatic\u2010prediction method of the MOSFET <jats:italic>V<\/jats:italic><jats:sub>th<\/jats:sub> using machine learning (ML) is proposed. The ML model is trained with <jats:italic>V<\/jats:italic><jats:sub>th<\/jats:sub>, extracted using different methods (2nd derivative, constant current, and <jats:italic>Y<\/jats:italic>\u2010function) and from various kinds of FETs (finFET, 2D FET, and metal\u2013oxide thin\u2010film transistors). The concept of threshold ratio (<jats:italic>R<\/jats:italic><jats:sub>th<\/jats:sub>) for universal <jats:italic>V<\/jats:italic><jats:sub>th<\/jats:sub> prediction, which considers the normalized <jats:italic>V<\/jats:italic><jats:sub>th<\/jats:sub> within certain <jats:italic>V<\/jats:italic><jats:sub>G<\/jats:sub> ranges, is suggested. The precision and accuracy of ML models are statistically verified by calculating the root mean square error (RMSE), mean absolute error, and mean coefficients of determination (<jats:italic>R<\/jats:italic><jats:sup>2<\/jats:sup>) values. The universal ML model (<jats:italic>k<\/jats:italic>\u2010nearest neighbor (kNN)) achieves 1.35% of RMSE and 0.98 of <jats:italic>R<\/jats:italic><jats:sup>2<\/jats:sup> for the best score. The ML model eliminates the ambiguity in <jats:italic>V<\/jats:italic><jats:sub>th<\/jats:sub> extraction and provides objective <jats:italic>V<\/jats:italic><jats:sub>th<\/jats:sub> prediction for most FET schemes used in the semiconductor industry and research field.<\/jats:p><\/jats:sec>","DOI":"10.1002\/aisy.202200302","type":"journal-article","created":{"date-parts":[[2022,12,20]],"date-time":"2022-12-20T15:59:13Z","timestamp":1671551953000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["Automatic Prediction of Metal\u2013Oxide\u2013Semiconductor Field\u2010Effect Transistor Threshold Voltage Using Machine Learning Algorithm"],"prefix":"10.1002","volume":"5","author":[{"given":"Seoyeon","family":"Choi","sequence":"first","affiliation":[{"name":"Department of Electronics and Information Engineering Korea University  2511 Sejong-ro 30019 Sejong Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7547-3369","authenticated-orcid":false,"given":"Dong Geun","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Electronics and Information Engineering Korea University  2511 Sejong-ro 30019 Sejong Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Min Jung","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electronics and Information Engineering Korea University  2511 Sejong-ro 30019 Sejong Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seain","family":"Bang","sequence":"additional","affiliation":[{"name":"Department of Electronics and Information Engineering Korea University  2511 Sejong-ro 30019 Sejong Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jungchun","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electronics and Information Engineering Korea University  2511 Sejong-ro 30019 Sejong Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seunghee","family":"Jin","sequence":"additional","affiliation":[{"name":"Department of Electronics and Information Engineering Korea University  2511 Sejong-ro 30019 Sejong Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ki Seok","family":"Huh","sequence":"additional","affiliation":[{"name":"Department of Electronics and Information Engineering Korea University  2511 Sejong-ro 30019 Sejong Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Donghyun","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electronics and Information Engineering Korea University  2511 Sejong-ro 30019 Sejong Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jerome","family":"Mitard","sequence":"additional","affiliation":[{"name":"imec  Kapeldreef 75 3001 Leuven Belgium"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Cheol E.","family":"Han","sequence":"additional","affiliation":[{"name":"Department of Electronics and Information Engineering Korea University  2511 Sejong-ro 30019 Sejong Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4876-3109","authenticated-orcid":false,"given":"Jae Woo","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Electronics and Information Engineering Korea University  2511 Sejong-ro 30019 Sejong Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2022,12,20]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"crossref","volume-title":"Semiconductor Material and Device Characterization","author":"Schroeder D.","DOI":"10.1002\/0471749095"},{"key":"e_1_2_8_3_1","first-page":"176","volume":"51","author":"Ortiz-Conde A.","year":"2000","journal-title":"Acta Cient. 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