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To reduce the area overheads, various nonvolatile memory (NVM) devices, such as ferroelectric field\u2010effect transistors (FeFETs), are used in CAM design. Herein, a novel ultracompact 1FeFET CAM design that enables parallel associative search and in\u2010memory hamming distance calculation is used, as well as a multibit CAM for exact search using the same CAM cell. The proposed CAM design leverages the 1FeFET1R structure, and compact device designs that integrate the series resistor current limiter into the intrinsic FeFET structure are demonstrated to turn the 1FeFET1R structure into an effective 1FeFET cell. A two\u2010step search operation of the proposed binary and multibit 1FeFET CAM array through both experiments and simulations is proposed, showing a sufficient sensing margin despite unoptimized FeFET device variation. In genome pattern matching applications, using the hyperdimensional computing paradigm, the design results in a 89.9\u00d7 speedup and 66.5\u00d7 improvement in energy efficiency over the state\u2010of\u2010the\u2010art alignment tools on GPU.<\/jats:p><\/jats:sec>","DOI":"10.1002\/aisy.202200428","type":"journal-article","created":{"date-parts":[[2023,4,7]],"date-time":"2023-04-07T04:16:07Z","timestamp":1680840967000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":31,"title":["An Ultracompact Single\u2010Ferroelectric Field\u2010Effect Transistor Binary and Multibit Associative Search Engine"],"prefix":"10.1002","volume":"5","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4656-9545","authenticated-orcid":false,"given":"Xunzhao","family":"Yin","sequence":"first","affiliation":[{"name":"College of Information Science and Electronic Engineering Zhejiang University  Hangzhou 310027 China"}]},{"given":"Franz","family":"M\u00fcller","sequence":"additional","affiliation":[{"name":"IPMS Fraunhofer Center Nanoelectronic Technologies  01109 Dresden Germany"}]},{"given":"Qingrong","family":"Huang","sequence":"additional","affiliation":[{"name":"College of Information Science and Electronic Engineering Zhejiang University  Hangzhou 310027 China"}]},{"given":"Chao","family":"Li","sequence":"additional","affiliation":[{"name":"College of Information Science and Electronic Engineering Zhejiang University  Hangzhou 310027 China"}]},{"given":"Mohsen","family":"Imani","sequence":"additional","affiliation":[{"name":"Department of Computer Science University of California Irvine  Irvine 92697 USA"}]},{"given":"Zeyu","family":"Yang","sequence":"additional","affiliation":[{"name":"College of Information Science and Electronic Engineering Zhejiang University  Hangzhou 310027 China"}]},{"given":"Jiahao","family":"Cai","sequence":"additional","affiliation":[{"name":"College of Information Science and Electronic Engineering Zhejiang University  Hangzhou 310027 China"}]},{"given":"Maximilian","family":"Lederer","sequence":"additional","affiliation":[{"name":"IPMS Fraunhofer Center Nanoelectronic Technologies  01109 Dresden Germany"}]},{"given":"Ricardo","family":"Olivo","sequence":"additional","affiliation":[{"name":"IPMS Fraunhofer Center Nanoelectronic Technologies  01109 Dresden Germany"}]},{"given":"Nellie","family":"Laleni","sequence":"additional","affiliation":[{"name":"IPMS Fraunhofer Center Nanoelectronic Technologies  01109 Dresden Germany"}]},{"given":"Shan","family":"Deng","sequence":"additional","affiliation":[{"name":"Department of Electrical and Microelectronic Engineering Rochester Institute of Technology  Rochester 14623 USA"}]},{"given":"Zijian","family":"Zhao","sequence":"additional","affiliation":[{"name":"Department of Electrical and Microelectronic Engineering Rochester Institute of Technology  Rochester 14623 USA"}]},{"given":"Zhiguo","family":"Shi","sequence":"additional","affiliation":[{"name":"College of Information Science and Electronic Engineering Zhejiang University  Hangzhou 310027 China"}]},{"given":"Yiyu","family":"Shi","sequence":"additional","affiliation":[{"name":"Department of Computer Science and Engineering University of Notre Dame  Notre Dame 46556 USA"}]},{"given":"Cheng","family":"Zhuo","sequence":"additional","affiliation":[{"name":"School of Micro\u2010Nano Electronics Zhejiang University ZJU\u2010Hangzhou Global Scientific and Technological Innovation Center  Hangzhou 311200 China"}]},{"given":"Thomas","family":"K\u00e4mpfe","sequence":"additional","affiliation":[{"name":"IPMS Fraunhofer Center Nanoelectronic Technologies  01109 Dresden Germany"}]},{"given":"Kai","family":"Ni","sequence":"additional","affiliation":[{"name":"Department of Electrical and Microelectronic Engineering Rochester Institute of Technology  Rochester 14623 USA"}]}],"member":"311","published-online":{"date-parts":[[2023,4,7]]},"reference":[{"key":"e_1_2_10_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0092-2"},{"key":"e_1_2_10_3_1","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2019.2922889"},{"key":"e_1_2_10_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-020-0655-z"},{"key":"e_1_2_10_5_1","unstructured":"X. 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