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They have advantages such as a simple metal\u2013insulator\u2013metal structure, complementary metal oxide semiconductor (CMOS) compatibility, non\u2010destructive operation, and low power consumption. Moreover, doped HfO<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub>\u2010based FTJs are in the spotlight in terms of neuromorphic engineering as a way of advancing from the von Neumann structure. In particular, Al dopant is effective for inducing ferroelectric properties due to its smaller radius than that of Hf. The optimal concentration of Al varies depending on the device materials and the annealing conditions during deposition. Therefore, in\u2010depth research is required for neuromorphic applications. Herein, the properties of FTJ devices according to Al doping concentrations are analyzed. 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