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The fabricated FeTFT exhibits a highly linear conductance response (|<jats:italic>\u03b1<\/jats:italic>|\u2009=\u20090.21) with a large dynamic range (<jats:italic>G<\/jats:italic><jats:sub>max<\/jats:sub>\/<jats:italic>G<\/jats:italic><jats:sub>min<\/jats:sub>\u2009\u2248\u200953.2), although identical program pulses are applied to the device. In addition, because the inner metal layer of the FeTFTs has an MFMIS structure, the electric field is uniformly applied to the entire IGZO channel, which reduces the cycle\u2010to\u2010cycle variation (<jats:italic>\u03c3<\/jats:italic>\u2009=\u20090.47%) in the conductance responses. In the system simulation with the measured synaptic characteristics, the high classification accuracy of \u224897.0% is achieved in the MNIST image set, verifying the feasibility of FeTFT\u2010based neuromorphic systems.<\/jats:p>","DOI":"10.1002\/aisy.202300125","type":"journal-article","created":{"date-parts":[[2023,9,28]],"date-time":"2023-09-28T22:24:53Z","timestamp":1695939893000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":26,"title":["Analog Synaptic Devices Based on IGZO Thin\u2010Film Transistors with a Metal\u2013Ferroelectric\u2013Metal\u2013Insulator\u2013Semiconductor Structure for High\u2010Performance Neuromorphic Systems"],"prefix":"10.1002","volume":"5","author":[{"given":"Dongseok","family":"Kwon","sequence":"first","affiliation":[{"name":"Inter-University Semiconductor Research Center Department of Electrical and Computer Engineering Seoul National University  Seoul 08826 South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Eun Chan","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering Hanyang University  Seoul 04736 Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wonjun","family":"Shin","sequence":"additional","affiliation":[{"name":"Inter-University Semiconductor Research Center Department of Electrical and Computer Engineering Seoul National University  Seoul 08826 South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ryun-Han","family":"Koo","sequence":"additional","affiliation":[{"name":"Inter-University Semiconductor Research Center Department of Electrical and Computer Engineering Seoul National University  Seoul 08826 South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Joon","family":"Hwang","sequence":"additional","affiliation":[{"name":"Inter-University Semiconductor Research Center Department of Electrical and Computer Engineering Seoul National University  Seoul 08826 South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jong-Ho","family":"Bae","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering Kookmin University  Seoul 02707 Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Daewoong","family":"Kwon","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering Hanyang University  Seoul 04736 Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3559-9802","authenticated-orcid":false,"given":"Jong-Ho","family":"Lee","sequence":"additional","affiliation":[{"name":"Ministry of Science and ICT  Gawcheon 151742 Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2023,9,28]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s42256-019-0089-1"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-020-1942-4"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-021-25455-0"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-018-04484-2"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0023-2"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-021-00649-y"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2020.3003007"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2018.2790840"},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.5573\/JSTS.2022.22.2.115"},{"key":"e_1_2_9_11_1","doi-asserted-by":"publisher","DOI":"10.1109\/TNNLS.2021.3118451"},{"key":"e_1_2_9_12_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-021-25925-5"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-00523-3"},{"key":"e_1_2_9_14_1","doi-asserted-by":"crossref","unstructured":"X.Sun X.Peng P. 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