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However, existing analog memristors are still far from accurate tuning of multiple conductance states, which are crucial from the device\u2010level view. Herein, a reliable analog memristor based on ion\u2010slicing single\u2010crystalline LiNbO<jats:sub>3<\/jats:sub> (LNO) thin film is demonstrated. The highly ordered LNO crystal structure provides a stable pathway of oxygen vacancy migration, which is contributed to a stable Mott variable\u2010range hopping process in trap sites. Excellent analog switching characteristics with high reliability and repeatability, including long retention\/great endurance with small fluctuation (fluctuated within 0.22%), a large dynamic range of two orders of magnitude, hundreds of distinguishable conductance states with tunable linearity, and ultralow cyclic variances for multiple weight updating (down to 0.75%), are realized with the proposed memristor. As a result, a multilayer perceptron with a high recognition accuracy of 95.6% for Modified National Institute of Standards and Technology dataset is realized. The proposed analog memristive devices based on ion\u2010slicing single\u2010crystalline thin films offer a novel strategy for fabricating high\u2010performance memristors that combined linear tunability and long\u2010term repeatability, opening a novel avenue for neuromorphic computing application.<\/jats:p>","DOI":"10.1002\/aisy.202300155","type":"journal-article","created":{"date-parts":[[2023,7,8]],"date-time":"2023-07-08T06:31:37Z","timestamp":1688797897000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":11,"title":["Analog Ion\u2010Slicing LiNbO<sub>3<\/sub> Memristor Based on Hopping Transport for Neuromorphic Computing"],"prefix":"10.1002","volume":"5","author":[{"given":"Jiejun","family":"Wang","sequence":"first","affiliation":[{"name":"School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics) University of Electronic Science and Technology of China  Chengdu 611731 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