{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,5]],"date-time":"2026-02-05T06:23:24Z","timestamp":1770272604877,"version":"3.49.0"},"reference-count":42,"publisher":"Wiley","issue":"11","license":[{"start":{"date-parts":[[2023,8,23]],"date-time":"2023-08-23T00:00:00Z","timestamp":1692748800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["92064003"],"award-info":[{"award-number":["92064003"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61904194"],"award-info":[{"award-number":["61904194"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004739","name":"Youth Innovation Promotion Association of the Chinese Academy of Sciences","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100004739","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Intelligent Systems"],"published-print":{"date-parts":[[2023,11]]},"abstract":"<jats:p>Artificial synapses are key elements in building bioinspired, neuromorphic computing systems. Ferroelectric field\u2010effect transistors (FeFETs) with excellent controllability and complementary metal oxide semiconductor (CMOS) compatibility are favorable to achieving synaptic functions with low power consumption and high scalability. However, because of the only nonvolatile ferroelectric (Fe) characteristics in the FeFET, it is difficult to develop bioplausible short\u2010term synaptic elements for spatiotemporal information processing. By judiciously combining defects (DE) and Fe domains in gate stacks, a compact artificial synapse featuring spatiotemporal information processing on a single Fe\u2013DE fin FET (FinFET) is proposed. The devices are designed to work in a separate DE mode to induce short\u2010term plasticity by spontaneous charge detrapping, and a hybrid Fe\u2013DE mode to trigger long\u2010term plasticity through the coupling of defects and Fe domains. The capability of the compact synapse is demonstrated by differentiating 16 temporal inputs. Moreover, the highly controllable static electricity of advanced FinFETs leads to an ultralow power of 2\u2009fJ\u2009spike<jats:sup>\u22121<\/jats:sup>. An all Fe\u2013DE FinFET reservoir computing (RC) system is then constructed that achieves a recognition accuracy of 97.53% in digit classification. This work enables constructing RC systems with fully advanced CMOS\u2010compatible devices featuring highly energy\u2010efficient and low\u2010hardware systems.<\/jats:p>","DOI":"10.1002\/aisy.202300275","type":"journal-article","created":{"date-parts":[[2023,8,23]],"date-time":"2023-08-23T23:40:40Z","timestamp":1692834040000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Ultralow\u2010Power Compact Artificial Synapse Based on a Ferroelectric Fin Field\u2010Effect Transistor for Spatiotemporal Information Processing"],"prefix":"10.1002","volume":"5","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-1583-9939","authenticated-orcid":false,"given":"Zhaohao","family":"Zhang","sequence":"first","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"},{"name":"School of Integrated Circuits University of Chinese Academy of Sciences  Beijing 100049 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Guohui","family":"Zhan","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"},{"name":"School of Integrated Circuits University of Chinese Academy of Sciences  Beijing 100049 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Weizhuo","family":"Gan","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"},{"name":"School of Integrated Circuits University of Chinese Academy of Sciences  Beijing 100049 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yan","family":"Cheng","sequence":"additional","affiliation":[{"name":"Key Laboratory of Polar Materials and Devices East China Normal University  Shanghai 200062 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xumeng","family":"Zhang","sequence":"additional","affiliation":[{"name":"Frontier Institute of Chip and System Fudan University  Shanghai 200062 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yue","family":"Peng","sequence":"additional","affiliation":[{"name":"The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  Xi'an 710071 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jianshi","family":"Tang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits Tsinghua University  Beijing 100084 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fan","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"},{"name":"The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  Xi'an 710071 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jiali","family":"Huo","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"},{"name":"School of Integrated Circuits University of Chinese Academy of Sciences  Beijing 100049 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gaobo","family":"Xu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qingzhu","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhenhua","family":"Wu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"},{"name":"School of Integrated Circuits University of Chinese Academy of Sciences  Beijing 100049 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yan","family":"Liu","sequence":"additional","affiliation":[{"name":"The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  Xi'an 710071 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hangbing","family":"Lv","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"},{"name":"School of Integrated Circuits University of Chinese Academy of Sciences  Beijing 100049 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qi","family":"Liu","sequence":"additional","affiliation":[{"name":"Frontier Institute of Chip and System Fudan University  Shanghai 200062 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Genquan","family":"Han","sequence":"additional","affiliation":[{"name":"The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University  Xi'an 710071 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Huaxiang","family":"Yin","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"},{"name":"School of Integrated Circuits University of Chinese Academy of Sciences  Beijing 100049 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jun","family":"Luo","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"},{"name":"School of Integrated Circuits University of Chinese Academy of Sciences  Beijing 100049 China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wenwu","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences  Beijing 100029 China"},{"name":"School of Integrated Circuits University of Chinese Academy of Sciences  Beijing 100049 China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2023,8,23]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1254642"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-017-0006-8"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2016.70"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature14441"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1039\/C9MH01206K"},{"key":"e_1_2_8_7_1","volume-title":"Principles of Neural Science","author":"Kandel E. R.","year":"2000"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1146\/annurev.physiol.64.092501.114547"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2439635"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1007\/s11432-018-9425-1"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-020-20692-1"},{"key":"e_1_2_8_12_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-017-02337-y"},{"key":"e_1_2_8_13_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-019-0313-3"},{"key":"e_1_2_8_14_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4756"},{"key":"e_1_2_8_15_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.5b00697"},{"key":"e_1_2_8_16_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201503202"},{"key":"e_1_2_8_17_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl201040y"},{"key":"e_1_2_8_18_1","first-page":"697","author":"Burr G. W.","year":"2014","journal-title":"IEEE Int. Electron Devices Meet."},{"key":"e_1_2_8_19_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3054"},{"key":"e_1_2_8_20_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201800195"},{"key":"e_1_2_8_21_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms1737"},{"key":"e_1_2_8_22_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms5232"},{"key":"e_1_2_8_23_1","unstructured":"H.Mulaosmanovic J.Ocker S.M\u00fcller M.Noack J.M\u00fcller P.Polakowski T.Mikolajick S.Slesazeck inIEEE Symp. on VLSI Tech.IEEE Piscataway NJ2017 p.17082204."},{"key":"e_1_2_8_24_1","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.32.442"},{"key":"e_1_2_8_25_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2698083"},{"key":"e_1_2_8_26_1","first-page":"17524699","author":"Jerry M.","year":"2017","journal-title":"IEEE Int. Electron Devices Meet."},{"key":"e_1_2_8_27_1","first-page":"5","volume":"14","author":"Zhang Z.","year":"2022","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"e_1_2_8_28_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3127489"},{"key":"e_1_2_8_29_1","doi-asserted-by":"publisher","DOI":"10.1038\/s44172-022-00021-8"},{"key":"e_1_2_8_30_1","unstructured":"J.Yu Y.Li W.Sun W.Zhang Z.Gao D.Dong Z.Yu Y.Zhao J.Lai Q.Ding Q.Luo C.Dou Q.Zuo Y.Zhao S.Chen R.Zou H.Chen Q.Wang H.Lv X.Xu D.Shang M.Liu IEEE Symp. on VLSI Tech.IEEE Piscataway NJ2021 pp.1\u20132."},{"key":"e_1_2_8_31_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201803961"},{"key":"e_1_2_8_32_1","first-page":"33.5.1","author":"Zheng Y.","year":"2021","journal-title":"IEEE Int. Electron Devices Meet."},{"key":"e_1_2_8_33_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4903218"},{"key":"e_1_2_8_34_1","first-page":"9720565","author":"Zheng Y.","year":"2021","journal-title":"IEEE Int. Electron Devices Meet."},{"key":"e_1_2_8_35_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2020.3048349"},{"key":"e_1_2_8_36_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2807389"},{"key":"e_1_2_8_37_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.cell.2007.11.028"},{"key":"e_1_2_8_38_1","doi-asserted-by":"publisher","DOI":"10.1038\/nrn2093"},{"key":"e_1_2_8_39_1","doi-asserted-by":"publisher","DOI":"10.1039\/D1NR01260F"},{"key":"e_1_2_8_40_1","doi-asserted-by":"publisher","DOI":"10.1002\/aisy.201900084"},{"key":"e_1_2_8_41_1","first-page":"3372","volume":"70","author":"Tang M.","year":"2023","journal-title":"IEEE Electron Lett."},{"key":"e_1_2_8_42_1","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/27\/36\/365204"},{"key":"e_1_2_8_43_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202202366"}],"container-title":["Advanced Intelligent Systems"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/aisy.202300275","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,7]],"date-time":"2025-10-07T18:33:08Z","timestamp":1759861988000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/aisy.202300275"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,8,23]]},"references-count":42,"journal-issue":{"issue":"11","published-print":{"date-parts":[[2023,11]]}},"alternative-id":["10.1002\/aisy.202300275"],"URL":"https:\/\/doi.org\/10.1002\/aisy.202300275","archive":["Portico"],"relation":{},"ISSN":["2640-4567","2640-4567"],"issn-type":[{"value":"2640-4567","type":"print"},{"value":"2640-4567","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,8,23]]},"assertion":[{"value":"2023-05-25","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2023-08-23","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"2300275"}}