{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,3]],"date-time":"2026-03-03T02:43:54Z","timestamp":1772505834096,"version":"3.50.1"},"reference-count":64,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2024,1,8]],"date-time":"2024-01-08T00:00:00Z","timestamp":1704672000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100006360","name":"Bundesministerium f\u00fcr Wirtschaft und Energie","doi-asserted-by":"publisher","award":["IPCEI"],"award-info":[{"award-number":["IPCEI"]}],"id":[{"id":"10.13039\/501100006360","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Intelligent Systems"],"published-print":{"date-parts":[[2024,4]]},"abstract":"<jats:p>Hafnium oxide (HfO<jats:sub>2<\/jats:sub>)\u2010based ferroelectric field effect transistors (FeFETs) revolutionize the emerging nonvolatile memory area, especially with the potential to replace flash memories for several applications. In this article, the suitability of FeFET memories is investigated, especially FeFET\u2010based content addressable memory (CAM) cells, as storage\u2010class memory under junction temperature variations. FeFETs with silicon oxynitride interfacial layer are fabricated and characterized at various temperatures, varying from room temperature to 120\u2009\u00b0C. Although the memory window, numbers of programmable states, and endurance deteriorate at high temperatures, FeFETs show excellent robustness in data retention, write latency, and read stability at all temperatures, especially for binary operation. Finally, system\u2010level simulations using a Simulation Program with Integrated Circuit Emphasis software using experimental data are conducted to gauge the robustness of the data\u2010search operation using the CAM array under different temperatures. Despite temperature\u2010variation\u2010induced changes in FeFET devices, it is observed that binary CAM cells perform robust and unerring search operations for storing and searching data at temperatures up to 120\u2009\u00b0C.<\/jats:p>","DOI":"10.1002\/aisy.202300461","type":"journal-article","created":{"date-parts":[[2024,1,8]],"date-time":"2024-01-08T22:12:50Z","timestamp":1704751970000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Ferroelectric Field Effect Transistors\u2013Based Content\u2010Addressable Storage\u2010Class Memory: A Study on the Impact of Device Variation and High\u2010Temperature Compatibility"],"prefix":"10.1002","volume":"6","author":[{"given":"Athira","family":"Sunil","sequence":"first","affiliation":[{"name":"Fraunhofer\u2010Institut f\u00fcr Photonische Mikrosysteme IPMS \u2010 Center Nanoelectronic Technologies (CNT)  An der Bartlake 5 01109 Dresden Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Masud","family":"Rana SK","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering Indian Institute of Technology, Madras  Electrical Sciences Block, Play Field Avenue Chennai Tamil Nadu 600036 India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Maximilian","family":"Lederer","sequence":"additional","affiliation":[{"name":"Fraunhofer\u2010Institut f\u00fcr Photonische Mikrosysteme IPMS \u2010 Center Nanoelectronic Technologies (CNT)  An der Bartlake 5 01109 Dresden Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yannick","family":"Raffel","sequence":"additional","affiliation":[{"name":"Fraunhofer\u2010Institut f\u00fcr Photonische Mikrosysteme IPMS \u2010 Center Nanoelectronic Technologies (CNT)  An der Bartlake 5 01109 Dresden Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Franz","family":"M\u00fcller","sequence":"additional","affiliation":[{"name":"Fraunhofer\u2010Institut f\u00fcr Photonische Mikrosysteme IPMS \u2010 Center Nanoelectronic Technologies (CNT)  An der Bartlake 5 01109 Dresden Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ricardo","family":"Olivo","sequence":"additional","affiliation":[{"name":"Fraunhofer\u2010Institut f\u00fcr Photonische Mikrosysteme IPMS \u2010 Center Nanoelectronic Technologies (CNT)  An der Bartlake 5 01109 Dresden Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Raik","family":"Hoffmann","sequence":"additional","affiliation":[{"name":"Fraunhofer\u2010Institut f\u00fcr Photonische Mikrosysteme IPMS \u2010 Center Nanoelectronic Technologies (CNT)  An der Bartlake 5 01109 Dresden Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Konrad","family":"Seidel","sequence":"additional","affiliation":[{"name":"Fraunhofer\u2010Institut f\u00fcr Photonische Mikrosysteme IPMS \u2010 Center Nanoelectronic Technologies (CNT)  An der Bartlake 5 01109 Dresden Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Thomas","family":"K\u00e4mpfe","sequence":"additional","affiliation":[{"name":"Fraunhofer\u2010Institut f\u00fcr Photonische Mikrosysteme IPMS \u2010 Center Nanoelectronic Technologies (CNT)  An der Bartlake 5 01109 Dresden Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bhaswar","family":"Chakrabarti","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering Indian Institute of Technology, Madras  Electrical Sciences Block, Play Field Avenue Chennai Tamil Nadu 600036 India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1930-8799","authenticated-orcid":false,"given":"Sourav","family":"De","sequence":"additional","affiliation":[{"name":"Fraunhofer\u2010Institut f\u00fcr Photonische Mikrosysteme IPMS \u2010 Center Nanoelectronic Technologies (CNT)  An der Bartlake 5 01109 Dresden Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2024,1,8]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"crossref","unstructured":"C.Matsui K.Takeuchi in2017 47th European Solid\u2010State Device Research Conf. (ESSDERC) IEEE Leuven Belgium2017 pp.6\u20139 https:\/\/doi.org\/10.1109\/ESSDERC.2017.8066578.","DOI":"10.1109\/ESSDERC.2017.8066578"},{"key":"e_1_2_9_3_1","doi-asserted-by":"crossref","unstructured":"S.Okamoto C.Sun S.Hachiya T.Yamada Y.Saito T. O.Iwasaki K.Takeuchi in2015 IEEE Int. Memory Workshop (IMW) IEEE Monterey CA USA2015 pp.1\u20134 https:\/\/doi.org\/10.1109\/IMW.2015.7150277.","DOI":"10.1109\/IMW.2015.7150277"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1147\/rd.524.0439"},{"key":"e_1_2_9_5_1","unstructured":"S.D\u00fcnkel M.Trentzsch R.Richter P.Moll C.Fuchs O.Gehring M.Majer S.Wittek B.M\u00fcller T.Melde H.Mulaosmanovic S.Slesazeck S.Muller J.Ocker M.Noack D.-A.Lohr P.Polakowski J.Muller T.Mikolajick J.Hontschel B.Rice J.Pellerin S.Beyer in2017 IEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway NJ2017 pp.19\u20137."},{"key":"e_1_2_9_6_1","unstructured":"S.De D.Lu H.-H.Le S.Mazumder Y.-J.Lee W.-C.Tseng B.-H.Qiu M. A.Baig P.-J.Sung C.-J.Su C.-T.Wu W.-F.Wu W.-K.Yeh Y.-H.Wang in2021 Symposia on VLSI Technology and Circuits2021."},{"key":"e_1_2_9_7_1","doi-asserted-by":"crossref","unstructured":"S.Beyer S.D\u00fcnkel M.Trentzsch J.M\u00fcller A.Hellmich D.Utess J.Paul D.Kleimaier J.Pellerin S.M\u00fcller J.Ocker A.Benoist H.Zhou M.Mennenga M.Schuster F.Tassan M.Noack A.Pourkeramati F.Muller M.Lederer T.Ali R.Hoffmann T.Kampfe K.Seidel H.Mulaosmanovic E. T.Breyer T.Mikolajick S.Slesazeck in2020 IEEE Int. Memory Workshop (IMW) IEEE Piscataway NJ2020 pp.1\u20134.","DOI":"10.1109\/IMW48823.2020.9108150"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2022.3195119"},{"key":"e_1_2_9_9_1","unstructured":"M.Jerry P.-Y.Chen J.Zhang P.Sharma K.Ni S.Yu S.Datta in2017 IEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway NJ2017 pp.6.2.1\u20136.2.4."},{"key":"e_1_2_9_10_1","unstructured":"S.De B.-H.Qiu W.-X.Bu M. A.Baig C.-J.Su Y.-J.Lee D.Lu (Preprint) arXiv:2103.13302 2021."},{"key":"e_1_2_9_11_1","doi-asserted-by":"crossref","unstructured":"X.Lyu M.Si P. R.Shrestha K. P.Cheung P. D.Ye in2019 IEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway NJ2019 pp.15.2.1\u201315.2.4.","DOI":"10.1109\/IEDM19573.2019.8993509"},{"key":"e_1_2_9_12_1","doi-asserted-by":"crossref","unstructured":"S.De M. A.Baig B.-H.Qiu H.-H.Le Y.-J.Lee D.Lu in2022 Int. Symp. on VLSI Technology Systems and Applications (VLSI\u2010TSA) IEEE Hsinchu Taiwan2022 pp.1\u20132 https:\/\/doi.org\/10.1109\/VLSI-TSA54299.2022.9771015.","DOI":"10.1109\/VLSI-TSA54299.2022.9771015"},{"key":"e_1_2_9_13_1","unstructured":"T.Ali R.Olivo S.Kerdiles D.Lehninger M.Lederer S.De A.-S.Royet A.S\u00fcnb\u00fcl A.Prabhu K.K\u00fchnel M.Czernohorsky M.Rudolph R.Hoffmann C.Charpin\u2010Nicolle L.Grenouillet T.Kampfe K.Seidel inInt. Memory Workshop (IMW) IEEE Dresden Germany2022."},{"key":"e_1_2_9_14_1","doi-asserted-by":"crossref","unstructured":"F.M\u00fcller S.De R.Olivo M.Lederer A.Altawil R.Hoffmann T.K\u00e4mpfe T.Ali S.D\u00fcnkel H.Mulaosmanovic J.M\u00fcller S.Beyer K.Seidel G.Gerlach inIEEE Electron Device Letters IEEE Piscataway NJ2023 pp.757\u2013760.","DOI":"10.1109\/LED.2023.3256583"},{"key":"e_1_2_9_15_1","doi-asserted-by":"crossref","unstructured":"F.M\u00fcller S.De M.Lederer R.Hoffmann R.Olivo T.K\u00e4mpfe K.Seidel T.Ali H.Mulaosmanovic S.D\u00fcnkel J.M\u00fcller S.Beyer G.Gerlach in2023 IEEE Int. Memory Workshop (IMW) IEEE Monterey CA USA2023 pp.1\u20134 https:\/\/doi.org\/10.1109\/IMW56887.2023.10145940.","DOI":"10.1109\/IMW56887.2023.10145940"},{"key":"e_1_2_9_16_1","doi-asserted-by":"crossref","unstructured":"K.Seidel D.Lehninger F.M\u00fcller Y.Raffel A.S\u00fcnb\u00fcl R.Revello R. H. S.De T.K\u00e4mpfe M.Lederer in2023 IEEE Int. Memory Workshop (IMW) IEEE Piscataway NJ2023 pp.1\u20134.","DOI":"10.1109\/IMW56887.2023.10145945"},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2023.3274362"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1002\/aisy.202200389"},{"key":"e_1_2_9_19_1","doi-asserted-by":"crossref","unstructured":"S.De M.Lederer F.M\u00fcller Y.Raffel D.Lehninger A.Sunbul S.Duenkel T.Ali H.Mulaosmanovic M. A.Baig B.Chakrabarti S.Beyer T.-L.Wu J.M\u00fcller D. D.Lu K.Seidel T.Kaempfe TechRxiv. June 282023 https:\/\/doi.org\/10.36227\/techrxiv.23573523.v1","DOI":"10.36227\/techrxiv.23573523.v1"},{"key":"e_1_2_9_20_1","doi-asserted-by":"crossref","unstructured":"S.De M.Lederer Y.Raffel F.M\u00fcller K.Seidel T.K\u00e4mpfe in2022 19th Int. SoC Design Conf. (ISOCC)2022 pp.167\u2013168.","DOI":"10.1109\/ISOCC56007.2022.10031437"},{"key":"e_1_2_9_21_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.memori.2023.100050"},{"key":"e_1_2_9_22_1","unstructured":"C.-Y.Chiu S.De C.-Y.Cho T.-H.Hou inIEEE Electron Devices Technology and Manufacturing Conf. (EDTM)2024."},{"key":"e_1_2_9_23_1","unstructured":"V.Parmar F.M\u00fcller J.-H.Hsuen S. K.Kingra Y.Raffel M.Lederer T.Ali S.D\u00fcnkel K.Seidel S.Beyer T.-L.Wu T.K\u00e4mpfe S.De M.Suri in2023 Int. Symp. on VLSI Technology Systems and Applications (VLSI\u2010TSA) Hsinchu TaiwanApril 17\u201323 2023."},{"key":"e_1_2_9_24_1","doi-asserted-by":"crossref","unstructured":"J.-H.Hsuen M.Lederer L.Kerkhofs Y.Raffel L.Pirro T.Chohan K.Seidel T.K\u00e4mpfe S.De T.-L.Wu in2023 Int. VLSI Symp. on Technology Systems and Applications (VLSI\u2010TSA\/VLSI\u2010DAT) IEEE HsinChu Taiwan2023 pp.1\u20132 https:\/\/doi.org\/10.1109\/VLSI-TSA\/VLSI-DAT57221.2023.10134504.","DOI":"10.1109\/VLSI-TSA\/VLSI-DAT57221.2023.10134504"},{"key":"e_1_2_9_25_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsaelm.2c01357"},{"key":"e_1_2_9_26_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2023.3239330"},{"key":"e_1_2_9_27_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2023.3277845"},{"key":"e_1_2_9_28_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.3039477"},{"key":"e_1_2_9_29_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2023.3259940"},{"key":"e_1_2_9_30_1","volume-title":"Embedded Artificial Intelligence: Devices, Embedded Systems, and Industrial Applications","author":"De S.","year":"2022"},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1002\/9781394167647.ch11"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2022.3148669"},{"key":"e_1_2_9_33_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2022.3231123"},{"key":"e_1_2_9_34_1","doi-asserted-by":"crossref","unstructured":"J.-Y.Ciou S.De C.-W.Wang W.Lin Y.-J.Lee D.Lu in2021 5th IEEE Electron Devices Technology & Manufacturing Conf. (EDTM) IEEE Piscataway NJ2021 pp.1\u20133.","DOI":"10.1109\/EDTM50988.2021.9420931"},{"key":"e_1_2_9_35_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/ab7c79"},{"key":"e_1_2_9_36_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3089621"},{"key":"e_1_2_9_37_1","doi-asserted-by":"crossref","unstructured":"S.De M. A.Baig B.-H.Qiu D.Lu P.-J.Sung F. K.Hsueh Y.-J.Lee C.-J.Su in2020 Device Research Conf. (DRC) IEEE Columbus OH USA2020 pp.1\u20132 https:\/\/doi.org\/10.1109\/DRC50226.2020.9135186.","DOI":"10.1109\/DRC50226.2020.9135186"},{"key":"e_1_2_9_38_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsaelm.2c00771"},{"key":"e_1_2_9_39_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.memori.2023.100048"},{"key":"e_1_2_9_40_1","unstructured":"S.De Y.Raffel S.Thunder M.Ledered F.M\u00fcller T.K\u00e4mpfe inInt. Electron Devices & Materials Symp. 2022 IEDMS2022 Nantou Taiwan2022."},{"key":"e_1_2_9_41_1","doi-asserted-by":"crossref","unstructured":"S.De F.M\u00fcller M.Lederer Y.Raffel T.Ali L.Pirro S.D\u00fcnkel S.Beyer K.Seidel T.K\u00e4mpfe in2023 Int. VLSI Symp. on Technology Systems and Applications (VLSI-TSA\/VLSI-DAT) IEEE HsinChu Taiwan2023 pp.1\u20132 https:\/\/doi.org\/10.1109\/VLSI-TSA\/VLSI-DAT57221.2023.10134004.","DOI":"10.1109\/VLSI-TSA\/VLSI-DAT57221.2023.10134004"},{"key":"e_1_2_9_42_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsaelm.0c00610"},{"key":"e_1_2_9_43_1","doi-asserted-by":"crossref","unstructured":"S.De C.-Y.Cho T.Ali W.Banerjee L. P.Ramirez N.Barrett S.Majumder T.-H.Hou Perspective Roadmap of Advanced HfO2-based Ferroelectric Field Effect Transistors IEEE EDTM2024 99.","DOI":"10.1109\/EDTM58488.2024.10511366"},{"key":"e_1_2_9_44_1","doi-asserted-by":"crossref","unstructured":"S.De W.-X.Bu B.-H.Qiu C.-J.Su Y.-J.Lee D. D.Lu in2021 Int. Symp. on VLSI Technology Systems and Applications (VLSI-TSA) IEEE Hsinchu Taiwan2021 pp.1\u20132 https:\/\/doi.org\/10.1109\/VLSI-TSA51926.2021.9440091.","DOI":"10.1109\/VLSI-TSA51926.2021.9440091"},{"key":"e_1_2_9_45_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2944960"},{"key":"e_1_2_9_46_1","unstructured":"Y.Raffel S.Thunder M.Lederer R.Olivo R.Hoffmann L.Pirro S.Beyer T.Chohan P.-T.Huang S.De T.K\u00e4mpfe K.Seidel J.Heitman 2022 Int. Conf. on IC Design and Technology (ICICDT) IEEE Hanoi Vietnam2022."},{"key":"e_1_2_9_47_1","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2023.3295093"},{"key":"e_1_2_9_48_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/ab9bed"},{"key":"e_1_2_9_49_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/ac3f22"},{"key":"e_1_2_9_50_1","doi-asserted-by":"crossref","unstructured":"K.Ni A.Gupta O.Prakash S.Thomann X. S.Hu H.Amrouch in2020 IEEE Int. Reliability Physics Symposium (IRPS) IEEE Piscataway NJ2020 pp.1\u20135.","DOI":"10.1109\/IRPS45951.2020.9128323"},{"key":"e_1_2_9_51_1","doi-asserted-by":"crossref","unstructured":"K.Ni A.Gupta O.Prakash S.Thomann X. S.Hu H.Amrouch inIEEE Int. Reliability Physics Symp. Proc. IEEE Dallas TX USAApril2020 https:\/\/doi.org\/10.1109\/IRPS45951.2020.9128323.","DOI":"10.1109\/IRPS45951.2020.9128323"},{"key":"e_1_2_9_52_1","doi-asserted-by":"publisher","DOI":"10.3389\/fnano.2021.826232"},{"key":"e_1_2_9_53_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2022.3216558"},{"key":"e_1_2_9_54_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2022.3216973"},{"key":"e_1_2_9_55_1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2021.3077876"},{"key":"e_1_2_9_56_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.2996582"},{"key":"e_1_2_9_57_1","unstructured":"H.Zhou J.Ocker M.Pesic A.Padovani M.Trentzsch S.D\u00fcnkel J.M\u00fcller S.Beyer L.Larcher F.Koushan S.M\u00fcller T.Mikolajick in2021 Symp. on VLSI Technology Kyoto Japan2021 pp.1\u20132."},{"key":"e_1_2_9_58_1","doi-asserted-by":"publisher","DOI":"10.1088\/0256-307X\/35\/10\/107301"},{"key":"e_1_2_9_59_1","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2019.2902953"},{"key":"e_1_2_9_60_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.2994896"},{"key":"e_1_2_9_61_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.864128"},{"key":"e_1_2_9_62_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-019-0321-3"},{"key":"e_1_2_9_63_1","doi-asserted-by":"crossref","unstructured":"B.Govoreanu G. S.Kar Y.Chen V.Paraschiv S.Kubicek A.Fantini I.Radu L.Goux S.Clima R.Degraeve N.Jossart O.Richard T.Vandeweyer K.Seo P.Hendrickx G.Pourtois H.Bender L.Altimime D. J.Wouters J. A.Kittl M.Jurczak in2011 Int. Electron Devices Meeting IEEE Piscataway NJ2011 pp.31\u20136.","DOI":"10.1109\/IEDM.2011.6131652"},{"key":"e_1_2_9_64_1","doi-asserted-by":"crossref","unstructured":"C.-C.Lin J.-Y.Hung W.-Z.Lin C.-P.Lo Y.-N.Chiang H.-J.Tsai G.-H.Yang Y.-C.King C. J.Lin T.-F.Chen M.-F.Chang in2016 IEEE Int. Solid\u2010State Circuits Conf. (ISSCC) IEEE Piscataway NJ2016 pp.136\u2013137.","DOI":"10.1109\/ISSCC.2016.7417944"},{"key":"e_1_2_9_65_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2963300"}],"container-title":["Advanced Intelligent Systems"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/aisy.202300461","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,7]],"date-time":"2025-10-07T23:45:12Z","timestamp":1759880712000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/aisy.202300461"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,1,8]]},"references-count":64,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2024,4]]}},"alternative-id":["10.1002\/aisy.202300461"],"URL":"https:\/\/doi.org\/10.1002\/aisy.202300461","archive":["Portico"],"relation":{},"ISSN":["2640-4567","2640-4567"],"issn-type":[{"value":"2640-4567","type":"print"},{"value":"2640-4567","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,1,8]]},"assertion":[{"value":"2023-08-05","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2024-01-08","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"2300461"}}