{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,20]],"date-time":"2025-10-20T18:50:44Z","timestamp":1760986244088,"version":"build-2065373602"},"reference-count":56,"publisher":"Wiley","issue":"3","license":[{"start":{"date-parts":[[2023,12,8]],"date-time":"2023-12-08T00:00:00Z","timestamp":1701993600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100004085","name":"Ministry of Education, Science and Technology","doi-asserted-by":"publisher","award":["No.RS-2023-00254689"],"award-info":[{"award-number":["No.RS-2023-00254689"]}],"id":[{"id":"10.13039\/501100004085","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Intelligent Systems"],"published-print":{"date-parts":[[2024,3]]},"abstract":"<jats:p>[001]\u2010oriented NaNbO<jats:sub>3<\/jats:sub> films are deposited on Sr<jats:sub>2<\/jats:sub>Nb<jats:sub>3<\/jats:sub>O<jats:sub>10<\/jats:sub>\/TiN\/SiO<jats:sub>2<\/jats:sub>\/Si substrates at 300\u2009\u00b0C. The Sr<jats:sub>2<\/jats:sub>Nb<jats:sub>3<\/jats:sub>O<jats:sub>10<\/jats:sub> nanosheets are used as a template to form crystalline NaNbO<jats:sub>3<\/jats:sub> films at low temperature. The NaNbO<jats:sub>3<\/jats:sub> films deposited on one Sr<jats:sub>2<\/jats:sub>Nb<jats:sub>3<\/jats:sub>O<jats:sub>10<\/jats:sub> monolayer exhibit a bipolar switching curve due to the construction and destruction of oxygen vacancy filaments. Because the Sr<jats:sub>2<\/jats:sub>Nb<jats:sub>3<\/jats:sub>O<jats:sub>10<\/jats:sub> monolayer does not act as an insulating layer, the film does not exhibit self\u2010rectifying properties. Self\u2010rectifying properties are observed in the NaNbO<jats:sub>3<\/jats:sub> memristor, which forms on two Sr<jats:sub>2<\/jats:sub>Nb<jats:sub>3<\/jats:sub>O<jats:sub>10<\/jats:sub> monolayers that act as tunnel barriers in the memristor. The memristor exhibits extensive rectification and on\/off ratios of 48 and 15.7, respectively. Tunneling is the current conduction mechanism of the device in the low\u2010resistance state, and Schottky emission and tunneling are responsible for the conduction mechanism in the high\u2010resistance state at low and high voltages, respectively. The piezoelectric nanogenerator produced using the [001]\u2010oriented NaNbO<jats:sub>3<\/jats:sub> film generates high voltage (1.8\u2009V) and power (3.2\u2009\u03bcW). Furthermore, endurance of the resistive random\u2010access memory and nonlinear transmission characteristics of the biological synapse are accomplished in the NaNbO<jats:sub>3<\/jats:sub> memristor powered by the NaNbO<jats:sub>3<\/jats:sub> nanogenerator. Therefore, the [001]\u2010oriented crystalline NaNbO<jats:sub>3<\/jats:sub> film formed at 300\u2009\u00b0C may be utilized for self\u2010rectifying and self\u2010powered artificial synapses.<\/jats:p>","DOI":"10.1002\/aisy.202300634","type":"journal-article","created":{"date-parts":[[2023,12,8]],"date-time":"2023-12-08T23:05:44Z","timestamp":1702076744000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["Realization of Self\u2010Rectifying and Self\u2010Powered Resistive Random\u2010Access Memory Memristor Using [001]\u2010Oriented NaNbO<sub>3<\/sub> Film Deposited on Sr<sub>2<\/sub>Nb<sub>3<\/sub>O<sub>10<\/sub> Nanosheet at Low Temperatures"],"prefix":"10.1002","volume":"6","author":[{"given":"In-Su","family":"Kim","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea"}]},{"given":"Bumjoo","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea"}]},{"given":"Seok-June","family":"Chae","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2192-5320","authenticated-orcid":false,"given":"Sahn","family":"Nahm","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea"}]}],"member":"311","published-online":{"date-parts":[[2023,12,8]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/521037a"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1145\/359576.359579"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201102597"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl073225h"},{"key":"e_1_2_8_6_1","first-page":"345","volume":"2","author":"Kim S.","year":"1992","journal-title":"Analog Integr. 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