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Most stateful logic bases and algorithms have been studied using resistive random\u2010access memory devices. Herein, stateful full adders consisting of silicon p<jats:sup>+<\/jats:sup>\u2013n\u2013p\u2013n<jats:sup>+<\/jats:sup> diodes that exhibit switching and memory functions through band modulation are demonstrated. A 1\u2010bit full adder using ten diodes operates with ten sequential steps of material implication and NOR logic operations, and its energy consumption per operation is 50.4\u2009pJ. Row and column logic operations in a diode crossbar structure enable an <jats:italic>N<\/jats:italic>\u2010bit full adder algorithm. This study demonstrates the feasibility of achieving fully functional in\u2010memory computations using silicon diodes.<\/jats:p>","DOI":"10.1002\/aisy.202400735","type":"journal-article","created":{"date-parts":[[2025,2,11]],"date-time":"2025-02-11T22:00:11Z","timestamp":1739311211000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Stateful Full Adder Using Silicon Diodes"],"prefix":"10.1002","volume":"7","author":[{"given":"Jaemin","family":"Son","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering Korea University  145 Anam\u2010ro, Seongbuk\u2010gu Seoul 02841 Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Juhee","family":"Jeon","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering Korea University  145 Anam\u2010ro, Seongbuk\u2010gu Seoul 02841 Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1122-8003","authenticated-orcid":false,"given":"Kyoungah","family":"Cho","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering Korea University  145 Anam\u2010ro, Seongbuk\u2010gu Seoul 02841 Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7246-8724","authenticated-orcid":false,"given":"Sangsig","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering Korea University  145 Anam\u2010ro, Seongbuk\u2010gu Seoul 02841 Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2025,2,11]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/MIC.2023.3301010"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1088\/2634-4386\/ac4a83"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-020-0655-z"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2024.3400949"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-0411-2"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2022.3161847"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0092-2"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1002\/aisy.202000278"},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.202100208"},{"key":"e_1_2_9_11_1","unstructured":"E.Lehtonen M.Laiho presented at 2009 IEEE\/ACM Int. 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