{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,17]],"date-time":"2026-08-17T04:40:56Z","timestamp":1786941656166,"version":"build-2736575974"},"reference-count":63,"publisher":"Wiley","issue":"1","license":[{"start":{"date-parts":[[2025,7,24]],"date-time":"2025-07-24T00:00:00Z","timestamp":1753315200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2025,7,24]],"date-time":"2025-07-24T00:00:00Z","timestamp":1753315200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100003052","name":"Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["RS\u20102023\u201000235402"],"award-info":[{"award-number":["RS\u20102023\u201000235402"]}],"id":[{"id":"10.13039\/501100003052","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Intelligent Systems"],"published-print":{"date-parts":[[2026,1]]},"abstract":"<jats:p>\n                    With the growing demand for efficient data analysis in the era of big data and artificial intelligence, the limitations of traditional von Neumann computing systems, especially in parallel processing, have become evident. Reservoir computing (RC), an energy\u2010efficient computing paradigm that leverages fixed weights and trains only the output layer, has emerged as a promising solution. Physical reservoir computing (PRC), which implements RC in hardware, enables real\u2010time and large\u2010scale data processing but faces challenges, such as process variability, material degradation, and limited complementary metal\u2010oxide\u2010semiconductor (CMOS) compatibility. This study introduces a novel PRC device based on an electrochemical field\u2010effect transistor (EcFET) with an indium gallium zinc oxide (IGZO) channel. The EcFET controls oxygen vacancies, which act as n\u2010type dopants, by injecting and extracting oxygen ions through electrochemical redox reactions in the channel. By applying an electric field to the gate electrode, the threshold voltage of the channel is controlled, enabling conductance modulation. With its low ion diffusivity, the IGZO channel provides short\u2010term memory characteristics and excellent performance. The proposed device exhibits a time constant of \u2248300\u2009ms, durability over \u224810\n                    <jats:sup>4<\/jats:sup>\n                    cycles, cell variability below 10%, and test accuracy of 94.29%. These findings demonstrate the potential of IGZO\u2010based EcFETs for next\u2010generation energy\u2010efficient PRC.\n                  <\/jats:p>","DOI":"10.1002\/aisy.202500285","type":"journal-article","created":{"date-parts":[[2025,7,24]],"date-time":"2025-07-24T22:48:12Z","timestamp":1753397292000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["A Novel Indium Gallium Zinc Oxide Channel\u2010Based Electrochemical Field Effect Transistor for Physical Reservoir Computing"],"prefix":"10.1002","volume":"8","author":[{"ORCID":"https:\/\/orcid.org\/0009-0002-7748-2100","authenticated-orcid":false,"given":"Hyejin","family":"Kim","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering Pohang University of Science and Technology (POSTECH)  Pohang 37673 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jinho","family":"Byun","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering Pohang University of Science and Technology (POSTECH)  Pohang 37673 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junghoon","family":"Park","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center Samsung Electronics  Hwaseong 18448 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kiheun","family":"Lee","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center Samsung Electronics  Hwaseong 18448 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Daewon","family":"Ha","sequence":"additional","affiliation":[{"name":"Semiconductor Research and Development Center Samsung Electronics  Hwaseong 18448 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0408-1165","authenticated-orcid":false,"given":"Seyoung","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering Pohang University of Science and Technology (POSTECH)  Pohang 37673 Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2025,7,24]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1002\/9781119792826.ch13"},{"key":"e_1_2_8_3_1","unstructured":"K.Adam I.Hammad M. 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