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Amorphous indium\u2013gallium\u2013zinc\u2013oxide (IGZO) is a promising candidate for optoelectronic synaptic transistors and neuron circuits due to its photoconductivity, low\u2010temperature fabrication process, and extremely low leakage current. Herein, an IGZO\u2010based optoelectronic neuromorphic system integrated with light guides is reported. The IGZO\u2010based optoelectronic synaptic transistor demonstrates high retention through a negative gate bias by the IGZO\u2010based neuron circuit and successfully emulates synaptic plasticity such as long\u2010term potentiation and long\u2010term depression. The proposed IGZO\u2010based neuron circuit with a double\u2010gate thin\u2010film transistor operates a dual role as a pulse generator in the programming stage and an integrate\u2010and\u2010fire neuron in the inference stage. The operation of the proposed neuron circuit through experiments and simulations is verified. 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Synapse\u2013neuron codesign with the same fabrication in this study facilitates advancements in future optoelectronic neuromorphic systems.<\/jats:p>","DOI":"10.1002\/aisy.202500402","type":"journal-article","created":{"date-parts":[[2025,7,21]],"date-time":"2025-07-21T18:40:03Z","timestamp":1753123203000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Optoelectronic Neuromorphic System Based on Amorphous Indium\u2013Gallium\u2013Zinc\u2013Oxide Thin\u2010Film Transistor for Spiking Neural Networks"],"prefix":"10.1002","volume":"8","author":[{"ORCID":"https:\/\/orcid.org\/0009-0005-8758-6001","authenticated-orcid":false,"given":"Yumin","family":"Yun","sequence":"first","affiliation":[{"name":"Department of Electrical and Computer Engineering Inter\u2010university Semiconductor Research Center (ISRC) Seoul National University  Seoul 08826 Republic of 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