{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,8]],"date-time":"2025-10-08T00:36:47Z","timestamp":1759883807127,"version":"build-2065373602"},"reference-count":48,"publisher":"Wiley","issue":"8","license":[{"start":{"date-parts":[[2025,6,16]],"date-time":"2025-06-16T00:00:00Z","timestamp":1750032000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Intelligent Systems"],"published-print":{"date-parts":[[2025,8]]},"abstract":"<jats:p>Electrochemical random\u2010access memory (ECRAM) devices are a promising candidate for neuromorphic computing, as they mimic synaptic functions by modulating conductance through ion migration. However, the use of a thick electrolyte layer (&gt;40\u2009nm) in conventional ECRAMs leads to an unavoidable tradeoff between synaptic weight updates and operating speed. To address this problem, a Cu\u2010based ultrathin ECRAM (UT\u2010ECRAM) that uses a single 5\u2009nm HfO<jats:sub><jats:italic><jats:bold>x<\/jats:bold><\/jats:italic><\/jats:sub> active layer and a \u22481.2\u2009nm AlO<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub> liner is designed. The highly efficient gate\u2010tunable fast Cu\u2010ion transport in the AlO<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub>\/HfO<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub> UT\u2010ECRAM enables 1) near\u2010ideal linearity in weight updates (0.45) even achieved with a pulse width (<jats:italic>t<\/jats:italic><jats:sub>w<\/jats:sub>) of 50\u2009\u03bcs, 2) dynamic multilevel retention of 10<jats:sup>4<\/jats:sup>\u2009s, and 3) reliable cycling endurance of 10<jats:sup>4<\/jats:sup> cycles. A numerical analysis based on device scaling quantitatively reveals that a relatively high concentration of field\u2010driven Cu ions (\u224810<jats:sup>20<\/jats:sup>\u2009cm<jats:sup>\u22123<\/jats:sup>) contributes to each synaptic weight update per gate voltage (<jats:italic>V<\/jats:italic><jats:sub>G<\/jats:sub>) pulse in the UT\u2010ECRAM without becoming deactivated by traversing thicker layers. This improved gate sensitivity can ultimately overcome the linearity and the ratio\/speed tradeoff relationships, paving the way for robust neuromorphic synaptic units.<\/jats:p>","DOI":"10.1002\/aisy.202500416","type":"journal-article","created":{"date-parts":[[2025,6,16]],"date-time":"2025-06-16T04:51:07Z","timestamp":1750049467000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Ultrathin (&lt;10\u2009nm) Electrochemical Random\u2010Access Memory that Overcomes the Tradeoff between Robust Weight Update and Speed in Neuromorphic Systems"],"prefix":"10.1002","volume":"7","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4129-4853","authenticated-orcid":false,"given":"Seonuk","family":"Jeon","sequence":"first","affiliation":[{"name":"School of Electronic and Electrical Engineering Kyungpook National University  Daegu 41566 South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seokjae","family":"Lim","sequence":"additional","affiliation":[{"name":"School of Electronic and Electrical Engineering Kyungpook National University  Daegu 41566 South Korea"},{"name":"Advanced Energy Research Center of Digital Convergence Division Gumi Electronics and Information Technology Research Institute  Gumi 39171 South\u00a0Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nir","family":"Tessler","sequence":"additional","affiliation":[{"name":"Sara and Moshe Zisapel Nano\u2010electronic Center, Electrical and Computer Engineering Technion Israel Institute of Technology  Hafia 32000003 Israel"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4968-6985","authenticated-orcid":false,"given":"Jiyong","family":"Woo","sequence":"additional","affiliation":[{"name":"School of Electronic and Electrical Engineering Kyungpook National University  Daegu 41566 South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2025,6,16]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature16961"},{"key":"e_1_2_9_3_1","first-page":"1097","volume-title":"Advances in Neural Information Processing Systems,","author":"Krizhevsky A.","year":"2012"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1109\/5.915374"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature22994"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563-019-0291-x"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature14539"},{"key":"e_1_2_9_8_1","unstructured":"S.Yu Z.Li P.-Y.Chen H.Wu B.Gao D.Wang W.Wu H.Qian IEEE Inter. Electron Devices Meeting (IEDM) IEEE San Francisco CA2016."},{"key":"e_1_2_9_9_1","unstructured":"G. W.Burr H.Tsai W.Simon I.Boybat S.Ambrogio C.-E.Ho Z.-W.Liou M.Rasch J.Buchel P.Narayanan T.Gordon S.Jain T. M.Levin K.Hosokawa M.Le Gallo H.Smith M.Ishii Y.Kohda A.Chen C.Mackin A.Fasoli K.El Maghraoui R.Muralidhar A.Okazaki C.-T.Chen M. M.Frank C.Lammie A.Vasilopoulos A. M.Friz J.Luquin et al. IEEE Inter. Electron Devices Meeting (IEDM) IEEE San Francisco CA2023."},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-023-42981-1"},{"key":"e_1_2_9_11_1","first-page":"32","volume":"7","author":"Han J.-K.","year":"2021","journal-title":"Sci. Adv."},{"key":"e_1_2_9_12_1","first-page":"12","volume":"67","author":"Wu J.","year":"2020","journal-title":"IEEE Trans. Electron Devices"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1002\/aisy.202000040"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2012.2190369"},{"key":"e_1_2_9_15_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2615648"},{"key":"e_1_2_9_16_1","unstructured":"S.Yu P.-Y.Chen Y.Cao L.Xia Y.Wang H.Wu IEEE Inter. Electron Devices Meeting IEEE San Francisco CA2015."},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.1002\/aisy.202200053"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3068716"},{"key":"e_1_2_9_19_1","first-page":"3","volume":"19","author":"Kim M.-K.","year":"2019","journal-title":"Nano Lett."},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1002\/aisy.202100175"},{"key":"e_1_2_9_21_1","unstructured":"S. R.Nandakumar I.Boybat J.-P.Han S.Ambrogio P.Adusumilli R. L.Bruce M.BrightSky M.Rasch M. L.Gallo A.Sebastian IEEE Inter. Electron Devices Meeting IEEE San Francisco CA2020."},{"key":"e_1_2_9_22_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2439635"},{"key":"e_1_2_9_23_1","unstructured":"J.Tang D.Bishop S.Kim M.Copel T.Gokmen T.Todorov S.Shin K.-T.Lee P.Solomon K.Chan W.Haensch J.Rozen IEEE Inter. Electron Devices Meeting IEEE San Francisco CA2018."},{"key":"e_1_2_9_24_1","first-page":"7","volume":"70","author":"Lee J.","year":"2023","journal-title":"IEEE Trans. Electron Devices"},{"key":"e_1_2_9_25_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201804170"},{"key":"e_1_2_9_26_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aaw5581"},{"key":"e_1_2_9_27_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.abp8064"},{"key":"e_1_2_9_28_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-023-00939-7"},{"key":"e_1_2_9_29_1","unstructured":"S.Kim T.Todorov M.Onen T.Gokmen D.Bishop P.Solomon K.-T.Lee M.Copel D. B.Farmer J. A.Ott T.Ando H.Miyazoe V.Narayanan J.Rozen IEEE Inter. Electron Devices Meeting IEEE San Francisco CA2019."},{"key":"e_1_2_9_30_1","first-page":"10","volume":"41","author":"Lee C.","year":"2020","journal-title":"IEEE Electron Device Lett."},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202100185"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202003984"},{"key":"e_1_2_9_33_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0059697"},{"key":"e_1_2_9_34_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-023-49251-6"},{"key":"e_1_2_9_35_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0059804"},{"key":"e_1_2_9_36_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0154153"},{"key":"e_1_2_9_37_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2010.07.086"},{"key":"e_1_2_9_38_1","doi-asserted-by":"publisher","DOI":"10.3390\/cryst8060248"},{"key":"e_1_2_9_39_1","doi-asserted-by":"publisher","DOI":"10.1002\/sia.1653"},{"key":"e_1_2_9_40_1","first-page":"12","volume":"37","author":"Chen P.-Y.","year":"2018","journal-title":"IEEE Trans. Comput. Aided Des. Integr. Circuits Syst."},{"key":"e_1_2_9_41_1","doi-asserted-by":"publisher","DOI":"10.1016\/0025-5408(76)90077-5"},{"key":"e_1_2_9_42_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.physrep.2015.11.002"},{"key":"e_1_2_9_43_1","unstructured":"P. M.Solomon D. M.Bishop T. K.Todorov S.Dawes D. B.Farmer M.Copel K.-T.Lee J.Collins J.Rozen inIEEE Inter. Reliability Physics Symp.IEEE Monterey CA USA2021."},{"key":"e_1_2_9_44_1","first-page":"5","volume":"71","author":"Porzani M.","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"key":"e_1_2_9_45_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0099827"},{"key":"e_1_2_9_46_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-024-55681-7"},{"key":"e_1_2_9_47_1","first-page":"6","volume":"210","author":"Jia X.","year":"2013","journal-title":"Phys. Status Solidi A"},{"key":"e_1_2_9_48_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0168089"},{"key":"e_1_2_9_49_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.3c09162"}],"container-title":["Advanced Intelligent Systems"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/aisy.202500416","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,7]],"date-time":"2025-10-07T20:31:17Z","timestamp":1759869077000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/aisy.202500416"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,6,16]]},"references-count":48,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2025,8]]}},"alternative-id":["10.1002\/aisy.202500416"],"URL":"https:\/\/doi.org\/10.1002\/aisy.202500416","archive":["Portico"],"relation":{},"ISSN":["2640-4567","2640-4567"],"issn-type":[{"type":"print","value":"2640-4567"},{"type":"electronic","value":"2640-4567"}],"subject":[],"published":{"date-parts":[[2025,6,16]]},"assertion":[{"value":"2025-04-13","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2025-06-16","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"2500416"}}