{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,24]],"date-time":"2026-01-24T15:13:34Z","timestamp":1769267614446,"version":"3.49.0"},"reference-count":19,"publisher":"Wiley","issue":"11","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Circuit Theory &amp; Apps"],"published-print":{"date-parts":[[2025,11]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>As embedded flash memory advances to smaller process nodes, supply voltage reductions are necessary to lower dynamic power consumption and ensure the safe operation of increasingly smaller transistors. Embedded flash memory requires reliable signal conversion across multiple voltage domains, a task typically handled by level shifters. However, achieving robust level shifter performance becomes significantly more challenging as supply voltages decrease. This paper presents a wide\u2010range voltage, high\u2010speed progressive level shifter utilizing a combination of 1.1\u2010V thin\u2010oxide and 5\u2010V thick\u2010oxide transistors. When combined with a charge pump, the generated intermediate voltage facilitates efficient signal conversion from low\u2010 to multiple high\u2010voltage domains, enabling the proposed LS to achieve robust performance. Postlayout simulations in a 40\u2010nm CMOS process demonstrate a transition delay of 1.01\u2009ns and energy consumption of 587.86\u2009fJ for a 0.75\u2010 to 4.5\u2010V conversion. For a 0.75\u2010 to 9\u2010V conversion, the delay is 1.31\u2009ns with energy consumption of 3863.26\u2009fJ, operating at 50\u2009MHz with a 15\u2010fF output load. These results underscore the robustness and efficiency of the proposed LS, positioning it as a strong candidate for embedded flash memory applications in advanced nodes with reduced supply voltages.<\/jats:p>","DOI":"10.1002\/cta.4527","type":"journal-article","created":{"date-parts":[[2025,3,31]],"date-time":"2025-03-31T18:52:14Z","timestamp":1743447134000},"page":"6675-6684","update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["A Wide\u2010Range Voltage and High\u2010Speed Progressive Level Shifter With Charge Pump for Embedded Flash Memory"],"prefix":"10.1002","volume":"53","author":[{"ORCID":"https:\/\/orcid.org\/0009-0008-6208-084X","authenticated-orcid":false,"given":"Tao","family":"Xu","sequence":"first","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences  Shanghai China"},{"name":"University of Chinese Academy of Sciences  Beijing China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0003-2565-0608","authenticated-orcid":false,"given":"Guoji","family":"Qiu","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences  Shanghai China"},{"name":"University of Chinese Academy of Sciences  Beijing China"}]},{"given":"Zhiyuan","family":"Hu","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences  Shanghai China"},{"name":"University of Chinese Academy of Sciences  Beijing China"}]},{"given":"Zhengxuan","family":"Zhang","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences  Shanghai China"},{"name":"University of Chinese Academy of Sciences  Beijing China"}]},{"given":"Dawei","family":"Bi","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences  Shanghai China"},{"name":"University of Chinese Academy of Sciences  Beijing China"}]}],"member":"311","published-online":{"date-parts":[[2025,3,30]]},"reference":[{"issue":"6","key":"e_1_2_7_2_1","first-page":"1906","article-title":"A 38.5\u2010fJ 14.4\u2010ns Robust and Efficient Subthreshold\u2010to\u2010Suprathreshold Voltage\u2010Level Shifter Comprising Logic Mismatch\u2010Activated Current Control Circuit","volume":"70","author":"Sharafi M. N.","year":"2023","journal-title":"IEEE Transactions on Circuits and Systems II: Express Briefs"},{"issue":"3","key":"e_1_2_7_3_1","first-page":"1406","article-title":"An Ultra\u2010Low Leakage and Wide\u2010Range Voltage Level Shifter for Low\u2010Power Digital CMOS VLSIs","volume":"71","author":"Yuan A.","year":"2024","journal-title":"IEEE Transactions on Circuits and Systems II: Express Briefs"},{"issue":"10","key":"e_1_2_7_4_1","doi-asserted-by":"crossref","first-page":"2685","DOI":"10.1109\/JSSC.2023.3266221","article-title":"C3MLS: An Ultra\u2010Wide\u2010Range Energy\u2010Efficient Level Shifter With CCLS\/CMLS Hybrid Structure","volume":"58","author":"Huang C.","year":"2023","journal-title":"IEEE Journal of Solid\u2010State Circuits"},{"issue":"5","key":"e_1_2_7_5_1","first-page":"2569","article-title":"An Ultra Low Voltage Energy Efficient Level Shifter With Current Limiter and Improved Split\u2010Controlled Inverter","volume":"71","author":"Wang 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