{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,9]],"date-time":"2026-03-09T00:16:26Z","timestamp":1773015386019,"version":"3.50.1"},"reference-count":22,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2025,6,21]],"date-time":"2025-06-21T00:00:00Z","timestamp":1750464000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2025,6,21]],"date-time":"2025-06-21T00:00:00Z","timestamp":1750464000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Circuit Theory &amp; Apps"],"published-print":{"date-parts":[[2026,2]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>SiC MOSFETs are widely used in AC\/DC converters of electric vehicle. The Miller effect is an important cause of switching losses in SiC MOSFETs. This article focuses on all\u2010silicon carbide three\u2010phase voltage source rectifier (VSR) AC\/DC converter. A series of studies have been conducted on the mechanism of SiC MOSFET losses and the causes of losses in the SiC three\u2010phase VSR. Based on a detailed analysis of the switching process of SiC MOSFETs, a high\u2010frequency switching model affected by Miller effect and device parasitic parameters is established. According to the model, the influence of various parameter changes on the Miller platform and switching losses under different driving modes is further discussed. A dual\u2010pulse test platform is built to verify the correctness of the model and the rationality of the analysis. On this basis, a steady\u2010state loss model of a three\u2010phase VSR under space vector pulse width modulation (SVPWM) is established. Finally, a prototype of a three\u2010phase VSR is designed and a test platform is built to experimentally verify the model. The output efficiency of the converter during closed\u2010loop steady\u2010state operation under multiple parameter changes is tested, and the experimental results are analyzed to provide suggestions for high\u2010frequency SiC MOSFET drive design.<\/jats:p>","DOI":"10.1002\/cta.70032","type":"journal-article","created":{"date-parts":[[2025,6,21]],"date-time":"2025-06-21T06:05:37Z","timestamp":1750485937000},"page":"678-694","update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Research on the Efficiency of Silicon Carbide Three\u2010Phase AC\/DC Converter Under the Influence of Miller Effect"],"prefix":"10.1002","volume":"54","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-1169-6325","authenticated-orcid":false,"given":"Kai","family":"Zhou","sequence":"first","affiliation":[{"name":"Engineering Research Center of Automotive Electronics Drive Control and System Integration (Ministry of Education) Harbin University of Science and Technology  Harbin China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8761-6996","authenticated-orcid":false,"given":"Zheng","family":"Li","sequence":"additional","affiliation":[{"name":"Engineering Research Center of Automotive Electronics Drive Control and System Integration (Ministry of Education) Harbin University of Science and Technology  Harbin China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0008-7811-6966","authenticated-orcid":false,"given":"Shuchun","family":"Gao","sequence":"additional","affiliation":[{"name":"Engineering Research Center of Automotive Electronics Drive Control and System Integration (Ministry of Education) Harbin University of Science and Technology  Harbin China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-4628-4251","authenticated-orcid":false,"given":"Zhipeng","family":"Xu","sequence":"additional","affiliation":[{"name":"Engineering Research Center of Automotive Electronics Drive Control and System Integration (Ministry of Education) Harbin 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