{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,9]],"date-time":"2026-03-09T00:16:01Z","timestamp":1773015361658,"version":"3.50.1"},"reference-count":39,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2025,7,4]],"date-time":"2025-07-04T00:00:00Z","timestamp":1751587200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2025,7,4]],"date-time":"2025-07-04T00:00:00Z","timestamp":1751587200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Circuit Theory &amp; Apps"],"published-print":{"date-parts":[[2026,2]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>With the advancement of integrated circuit technology, the performance requirements for voltage reference circuits have become more demanding. Temperature coefficient (TC) and power supply rejection (PSR) are crucial parameters for evaluating their performance. To enhance the performance of TC and PSR over a wide temperature range, a piecewise temperature compensation voltage reference circuit has been designed and demonstrated. This voltage reference circuit is intended for motor driver chips and can operate under extreme temperature conditions. The compensation circuit utilizes a bipolar junction transistor to compensate for the reference voltage at low temperatures, while a MOSFET operating in the subthreshold region is employed to compensate for the reference voltage at high temperatures. Based on a 0.18\u2009\u03bcm BCD (bipolar\u2010CMOS\u2010DMOS) technology, this design achieves an ultra\u2010low TC of 6.6\u2009ppm\/\u00b0C from \u221240\u00b0C to 170\u00b0C, with a high PSR of \u221297\u2009dB at 100\u2009Hz. The effectiveness of the proposed circuit design has been validated.<\/jats:p>","DOI":"10.1002\/cta.70063","type":"journal-article","created":{"date-parts":[[2025,7,4]],"date-time":"2025-07-04T03:13:14Z","timestamp":1751598794000},"page":"695-705","update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["A Wide\u2010Temperature\u2010Range Bandgap Reference Employing BJTs and Subthreshold MOSFETs for Piecewise Temperature Compensation"],"prefix":"10.1002","volume":"54","author":[{"given":"JiangPing","family":"He","sequence":"first","affiliation":[{"name":"School of Electrical Engineering and Electronic information Xihua University  Chengdu Sichuan China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-0738-1947","authenticated-orcid":false,"given":"DengQian","family":"Dong","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering and Electronic information 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