{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,10,23]],"date-time":"2023-10-23T05:07:18Z","timestamp":1698037638066},"reference-count":24,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T00:00:00Z","timestamp":1221177600000},"content-version":"vor","delay-in-days":6770,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Trans Emerging Tel Tech"],"published-print":{"date-parts":[[1990,3]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>This paper presents an extensive review of our work on the charge trapping characterization of thin (10\u201330 nm) nitrided SiO<jats:sub>2<\/jats:sub> films. Trapping of both electrons and holes, along with generation of interface traps, was studied as a function of the process conditions using the avalanche injection technique. Electron trap generation and time dependent breakdown were also investigated by injecting electrons at high fields. Our results show that, due to the high electron trapping induced by nitridation, interface\u2010trap generation under electron injection remains higher than that in the reference oxide for all the nitridation conditions experienced. Nitridation also reduces the maximum charge to breakdown, Q<jats:sub>BD<\/jats:sub> However, after a postnitridation annealing at 1000\u00b0C, the electron traps in the oxide nitrided at 900\u00b0C can be reduced to such a level that interface trap generation becomes lower than that in the reference oxide. Q<jats:sub>BD<\/jats:sub> is also greatly improved. Furthermore, hole trapping and interface\u2010state generation under hole avalanche injection can be reduced by nitridation itself provided it is carried out at relatively high temperatures (&gt;900\u00b0C) and for relatively long times (&gt;15 min.). It is thus found that with a careful optimization of the nitridation and postnitridation treatment conditions, a more reliable gate dielectric can be obtained.<\/jats:p>","DOI":"10.1002\/ett.4460010212","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T13:00:12Z","timestamp":1221224412000},"page":"149-153","source":"Crossref","is-referenced-by-count":0,"title":["Charge trapping and interface trap generation in thin nitrided silicon dioxide films for VLSI"],"prefix":"10.1002","volume":"1","author":[{"given":"Maurizio","family":"Severi","sequence":"first","affiliation":[]},{"given":"Maurizio","family":"Irnpronta","sequence":"additional","affiliation":[]},{"given":"Paolo","family":"Negrini","sequence":"additional","affiliation":[]},{"given":"Stefano","family":"Vassura","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","unstructured":"M.Severi:Gate dielectrics for VLSI\u2010MOS technology. In:Dielectric Layers in Semiconductors: Novel Technologies and Devices 1986(Ed. G.G. Bentini). Proc. European MRS Conf. XII (Les Editions de Physique Paris 1986) p.279\u2013289."},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1982.20732"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1985.21920"},{"key":"e_1_2_1_5_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.3343"},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.94614"},{"key":"e_1_2_1_7_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.95513"},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.336985"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1109\/EDL.1983.25700"},{"key":"e_1_2_1_10_2","doi-asserted-by":"crossref","unstructured":"S. K.Lai T.Lee Y. K.Dham:Electrical properties of nitrided\u2010oxide systems for use in gate dielectrics and EEPROM. In: IEDM Tech. Dig. (Washington D.C.) 1983 p.190\u2013193.","DOI":"10.1109\/IEDM.1983.190473"},{"key":"e_1_2_1_11_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2124347"},{"key":"e_1_2_1_12_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.94737"},{"key":"e_1_2_1_13_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.98549"},{"key":"e_1_2_1_14_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.92459"},{"key":"e_1_2_1_15_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.329502"},{"key":"e_1_2_1_16_2","first-page":"328","volume-title":"The defect structure of the Si\u2010SiO2 interface, a model based on trivalent silicon and its hydrogen compunds. In: The physics of SiO2 and its intetfaces","author":"Svensson C. 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In:Dielectric Layers in Semiconductors: Novel Technologies and Devices 1986. (Ed. G.G. Bentini) Proc. European MRS Conf. XII (Les Editions de Physique Paris 1986) p.263\u2013277."},{"key":"e_1_2_1_23_2","doi-asserted-by":"publisher","DOI":"10.1109\/EDL.1987.26581"},{"key":"e_1_2_1_24_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2108999"},{"key":"e_1_2_1_25_2","doi-asserted-by":"publisher","DOI":"10.1109\/55.719"}],"container-title":["European Transactions on Telecommunications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fett.4460010212","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/ett.4460010212","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,22]],"date-time":"2023-10-22T09:22:04Z","timestamp":1697966524000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/ett.4460010212"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1990,3]]},"references-count":24,"journal-issue":{"issue":"2","published-print":{"date-parts":[[1990,3]]}},"alternative-id":["10.1002\/ett.4460010212"],"URL":"https:\/\/doi.org\/10.1002\/ett.4460010212","archive":["Portico"],"relation":{},"ISSN":["1124-318X","1541-8251"],"issn-type":[{"value":"1124-318X","type":"print"},{"value":"1541-8251","type":"electronic"}],"subject":[],"published":{"date-parts":[[1990,3]]}}}