{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,10,23]],"date-time":"2023-10-23T07:40:02Z","timestamp":1698046802415},"reference-count":9,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T00:00:00Z","timestamp":1221177600000},"content-version":"vor","delay-in-days":6770,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Trans Emerging Tel Tech"],"published-print":{"date-parts":[[1990,3]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Gate oxide thinning induced by selective oxidation process has been studied. Tests on samples having both high and low boron doping concentration after wet oxidation of 9 and 50 h, have shown that gate thinning phenomenon is related to substrate doping concentration for p\u2010type silicon. The chemical resistivity of the nitride or oxynitride layer, which is assumed to be responsible for the gate thinning, has been tested and it also results to be related to the substrate boron concentration. A possible interpretation of the occurrence of the doping effect is given.<\/jats:p>","DOI":"10.1002\/ett.4460010213","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T12:57:16Z","timestamp":1221224236000},"page":"155-158","source":"Crossref","is-referenced-by-count":0,"title":["Gate oxide thinning as related to doping effects"],"prefix":"10.1002","volume":"1","author":[{"given":"P.","family":"Bellutti","sequence":"first","affiliation":[]},{"given":"C.","family":"Claeys","sequence":"additional","affiliation":[]},{"given":"I.","family":"Debusschere","sequence":"additional","affiliation":[]},{"given":"F.","family":"Corticelli","sequence":"additional","affiliation":[]},{"given":"D.","family":"Govoni","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2133008"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.18.943"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2123974"},{"key":"e_1_2_1_5_2","first-page":"100","volume-title":"Gettering and Defect Engineering in the Semiconductor Technology 1985","author":"Claeys C.","year":"1985"},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2129621"},{"key":"e_1_2_1_7_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2131467"},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2123982"},{"key":"e_1_2_1_9_2","volume-title":"Material Science Monographs 32: The Si\u2010SiO2 System","author":"Balk P.","year":"1988"},{"key":"e_1_2_1_10_2","first-page":"495","volume":"61","author":"Vanhellemoni J.","year":"1983","journal-title":"Inst. Phys. Conf. Ser."}],"container-title":["European Transactions on Telecommunications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fett.4460010213","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/ett.4460010213","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,22]],"date-time":"2023-10-22T09:22:07Z","timestamp":1697966527000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/ett.4460010213"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1990,3]]},"references-count":9,"journal-issue":{"issue":"2","published-print":{"date-parts":[[1990,3]]}},"alternative-id":["10.1002\/ett.4460010213"],"URL":"https:\/\/doi.org\/10.1002\/ett.4460010213","archive":["Portico"],"relation":{},"ISSN":["1124-318X","1541-8251"],"issn-type":[{"value":"1124-318X","type":"print"},{"value":"1541-8251","type":"electronic"}],"subject":[],"published":{"date-parts":[[1990,3]]}}}