{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,10,23]],"date-time":"2023-10-23T07:40:01Z","timestamp":1698046801826},"reference-count":10,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T00:00:00Z","timestamp":1221177600000},"content-version":"vor","delay-in-days":6770,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Trans Emerging Tel Tech"],"published-print":{"date-parts":[[1990,3]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>In this work we have investigated the feasibility of atmospheric pressure chemical vapor deposition of phosphorus and boron doped silicon oxides from a liquid source\u2014namely TMP (tri\u2010methyl\u2010phosphite)\u2014an alternative to phosphine as a P dopant source'. The most important results on process characterization, dopant incorporation, and film properties are presented. In addition to the easy operation of the liquid source, a remarkable improvement in step coverage has been found, in comparison with PSG deposition from conventional silane and phosphine chemistry.<\/jats:p>","DOI":"10.1002\/ett.4460010215","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T13:01:17Z","timestamp":1221224477000},"page":"167-172","source":"Crossref","is-referenced-by-count":0,"title":["Doped SiO<sub>2<\/sub> deposition from TMP in APCVD"],"prefix":"10.1002","volume":"1","author":[{"given":"L. D.","family":"Bartholomew","sequence":"first","affiliation":[]},{"given":"N. M.","family":"Gralenski","sequence":"additional","affiliation":[]},{"given":"J. C.","family":"Sisson","sequence":"additional","affiliation":[]},{"given":"G. U.","family":"Pignatel","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2100473"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2100749"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1116\/1.583564"},{"key":"e_1_2_1_5_2","unstructured":"N. M.Gralenski:Advanced APCVD reuctors Jor thin film deposition. Microelecrronic Manufacturing and Testing. Sept.\/Oct.1987."},{"key":"e_1_2_1_6_2","first-page":"117","article-title":"Optimizea chemical vapor deposition of borophosphosilicate glass films","volume":"46","author":"Kern W.","year":"1985","journal-title":"RCA Review"},{"key":"e_1_2_1_7_2","first-page":"3","article-title":"CVD glass films for passivation of silicon devices: preparotion. composition, and stress properties","volume":"37","author":"Kern W.","year":"1976","journal-title":"RCA Review"},{"key":"e_1_2_1_8_2","unstructured":"L. W.Winkle C. W.Nelson:Improved atmospheric pressure chemical\u2010vapor\u2010deposition systems for depositing silico and phosphosilicate glass thin flims. Solid State Techology. Oct.1981."},{"key":"e_1_2_1_9_2","unstructured":"C. M.Ablow:CVD computer model. Internal. reporr."},{"key":"e_1_2_1_10_2","volume-title":"BPSG films deposited by APCVD","author":"Hurley K. H.","year":"1987"},{"key":"e_1_2_1_11_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.328277"}],"container-title":["European Transactions on Telecommunications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fett.4460010215","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/ett.4460010215","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,22]],"date-time":"2023-10-22T09:22:18Z","timestamp":1697966538000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/ett.4460010215"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1990,3]]},"references-count":10,"journal-issue":{"issue":"2","published-print":{"date-parts":[[1990,3]]}},"alternative-id":["10.1002\/ett.4460010215"],"URL":"https:\/\/doi.org\/10.1002\/ett.4460010215","archive":["Portico"],"relation":{},"ISSN":["1124-318X","1541-8251"],"issn-type":[{"value":"1124-318X","type":"print"},{"value":"1541-8251","type":"electronic"}],"subject":[],"published":{"date-parts":[[1990,3]]}}}