{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,10,23]],"date-time":"2023-10-23T05:03:01Z","timestamp":1698037381241},"reference-count":20,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T00:00:00Z","timestamp":1221177600000},"content-version":"vor","delay-in-days":6770,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Trans Emerging Tel Tech"],"published-print":{"date-parts":[[1990,3]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Chemical vapour deposition of tungsten and aluminium films is discussed as alternative to sputtering of aluminium in future multilevel metallization schemes. Because CVD generally offers a very good step coverage it is an attractive technology for filling sub\u2010micron via's and contact holes. In this paper three CVD\u2010based metallization scenaria are discussed. The first one is filling of via's with selective (CVD) W followed by sputtering of A1 on the planarized surface. Secondly, blanket deposition of W is discussed and thirdly blanket deposition of (CVD) aluminium.<\/jats:p><jats:p>The many problems plaguing selective W such as selectivity loss, encroachment, creep up, etc. are discussed. Selectivity loss is shown to be linked with the presence of reaction by\u2010products.<\/jats:p><jats:p>Aluminium CVD, carried out in a novel type multi\u2010chamber reactor system is presented as a potentially attractive alternative to tungsten.<\/jats:p>","DOI":"10.1002\/ett.4460010218","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T12:58:40Z","timestamp":1221224320000},"page":"185-194","source":"Crossref","is-referenced-by-count":0,"title":["Multi\u2010level metallization: Future prospects"],"prefix":"10.1002","volume":"1","author":[{"given":"E. H. A.","family":"Crannernan","sequence":"first","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","unstructured":"A. N.Saxena:VLSI Multilevel metallizations: the role of tungsten. In: Proceedings workshop on W and other refr. metals for VLSl applications Albuquerque NM. USA November 12\u201313 1984. Edt: R.S. Blewer Mat. Res. Soc. Pittsburg 1985. p.355\u2013362."},{"issue":"9","key":"e_1_2_1_3_2","first-page":"61","article-title":"Focussing on a Si\u2010N type passivation layer to be used in capacilors","volume":"43","year":"1988","journal-title":"Nikkei Microdevices"},{"key":"e_1_2_1_4_2","unstructured":"A.Sherman:TiN deposition in a cold wall CVD reactor. In: Proceedings 4th workshop on W and other refr. metals for VLSl applications Albuquerque October 4\u20136 1988. Edts: R.S. Blewer C.M. McConica Mat. Res. Soc. Pittsburgh 1989 p.323\u2013329."},{"key":"e_1_2_1_5_2","unstructured":"L. F. T. Z.Kwakman B. G.Sluijk H.Piekaar E. H. A.Granne\u2010man:LPCVD of Aluminium in a batch\u2010type multi\u2010chamber processing system. In: Proceedings 4th workshop on W and other refr. metals for VLSI applications Albuquerque October 4\u20136 1988. Edts: R.S. Blewer C.M. McConica Mat. Res. Soc. Pittsburgh 1989 p.315\u2013321."},{"key":"e_1_2_1_6_2","unstructured":"M. L.Yu B. N.Eldridge R. V.Joshi:A study on the reaction of WF6with Si (100) surfaces. In: 3rd workshop on W and Refr. metals for VLSI Appl. Yorktown Heights N.Y. USA October 7\u20139 1987. Ed. V.A. Wells Mat. Res Soc. Pittsburgh 1988 p.75\u201381."},{"key":"e_1_2_1_7_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2115864"},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2108468"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2113664"},{"key":"e_1_2_1_10_2","unstructured":"P.van der Putte:The Reaction kinetics of the H2reduction of WF6in the chemical vapour deposition of tungsten films. In: Proc. 2nd workshop on W and other refr. metals for VLSI Appl. Palo Alto Ca USA Nov. 12\u201314 1986. Edt. E.K. Broad\u2010bent Mat. Res. Soc. Pittsburgh 1987 p.77\u201384."},{"key":"e_1_2_1_11_2","unstructured":"T.Ohba T.Suzuki T.Hara:Selective CVD of tungsten using silane and polysilane reductions. In: Proc. 4th workshop on W and other refr. metals for VLSI Appl. Albuquerque October 4\u20136 1988 (Edts: R.S. Blewer C.M McConica). Mat. Res. Soc. Pittsburgh 1989 p.17\u201325."},{"key":"e_1_2_1_12_2","doi-asserted-by":"crossref","unstructured":"J. E. J.Schmitz M. J.Buiting R. C.Ellwanger:Study of the SIH4\u2010\u2010WF6chemistry used in selective lungsten deposition. In: Proceedings 4th workshop on W and other refr. metals for VLSI applications Albuquerque October 4\u20136. 1988. Edts: R.S. Blewer C.M. McConica Mat. Res. Soc. Pittsburgh 1989 p.27\u201333.","DOI":"10.1016\/0169-4332(89)90554-0"},{"key":"e_1_2_1_13_2","unstructured":"L.F. Tz.Kwakman W. J. C.Vermeulen E. H. A.Granneman M. L.Hitchman:A quantitalive analysis of the effects of reaction by\u2010products on selectivity during the selective deposition of tungsten. In: Proc. 3rd workshop on W and other refr. metals for VLSI appl. York Town Heights October 7\u20139. 1987 Edt. V.A. Wells Mat. Res. Soc. Pittsburgh 1988 p.144\u2013147."},{"key":"e_1_2_1_14_2","unstructured":"C. M.McConica:A model for tungsten nucleation on oxide. In: proc. 2nd workshop on W and other refr. metals for VLSI appl. Palo Alto CA November 12\u201314 1986. Edt. E.K. Broad\u2010bent Mat. Res. Soc. Pittsburgh 1987 p.51\u201357."},{"key":"e_1_2_1_15_2","doi-asserted-by":"publisher","DOI":"10.1149\/1.2096601"},{"key":"e_1_2_1_16_2","doi-asserted-by":"crossref","unstructured":"J. E. J.Schrnitz A. J. M.van Dijk J. L. G.Suijker M. J.Buiting R. C.Ellwanger:A high throughput blanket\u2010tungsten process based on H2\u2010WF6chemistry. In: Proc. 2nd Eur. workshop on refr. metals and silicides Houthalen Belgium March 22\u201325 1989. Appl. Surf. 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