{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,1]],"date-time":"2025-02-01T05:30:51Z","timestamp":1738387851477,"version":"3.35.0"},"reference-count":7,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T00:00:00Z","timestamp":1221177600000},"content-version":"vor","delay-in-days":6770,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Trans Emerging Tel Tech"],"published-print":{"date-parts":[[1990,3]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>This work presents a detailed characterization of commercial E<jats:sup>2<\/jats:sup>PROMs performed by means of a new technique that allows non destructive monitoring of cell aging. Such a tech nique is based on accurate time control of the device power supply to stop the programming process, thus freezing the charge injected into the floating gate. Since a characteristic time is measured, the experiments can be performed varying other important parameters (in particular the supply voltage), whose influence on device endurance has been demonstrated. Thp method is also used to monitor the floating gate charging and discharging dynamics exploiting measurements of the drawn current.<\/jats:p>","DOI":"10.1002\/ett.4460010220","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T13:01:23Z","timestamp":1221224483000},"page":"201-207","source":"Crossref","is-referenced-by-count":1,"title":["Testing of E<sup>2<\/sup>PROM aging and endurance: A case study"],"prefix":"10.1002","volume":"1","author":[{"given":"Massimo","family":"Lanzoni","sequence":"first","affiliation":[]},{"given":"Roberto","family":"Menozzi","sequence":"additional","affiliation":[]},{"given":"Piero","family":"Olivo","sequence":"additional","affiliation":[]},{"given":"Bruno","family":"Ricc\u00f2","sequence":"additional","affiliation":[]},{"given":"Andrea","family":"Haardt","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1109\/PROC.1976.10272"},{"key":"e_1_2_1_3_2","unstructured":"H. E.Meas J.Witters G.Ggroeseneken:Trends in non\u2010volatile memory devices and technologies. IEEE ESSDERC '87 1987 p 743."},{"key":"e_1_2_1_4_2","doi-asserted-by":"crossref","unstructured":"R. K.Ellis H. A. R.Wagener J. M.Caywood:Electron tunneling in non\u2010planar floating gale memory situctures. IEEE IEDM 82 1982 p.749.","DOI":"10.1109\/IEDM.1982.190403"},{"key":"e_1_2_1_5_2","unstructured":"N.Mielke A.Fazio Ho\u2010Chun Liou:Reliability comparison of FLOTOX and textured\u2010polysilicon memory structures. EEE IEDM '82 1982 p.749."},{"key":"e_1_2_1_6_2","doi-asserted-by":"crossref","unstructured":"Cheming Hu D. Y.Joh Y.Shum T.Klein:Electron trapping in oxide grown from polycristalline silicon. IEEE IEDM '79 1979 p.229.","DOI":"10.1109\/IEDM.1979.189586"},{"key":"e_1_2_1_7_2","doi-asserted-by":"crossref","unstructured":"B.Euzent N.Boruta J.Lee C.Jeng:Reliability aspecis of a floating gale E2PROM. IEEE IRPS '81.1981 p.11.","DOI":"10.1109\/IRPS.1981.362965"},{"key":"e_1_2_1_8_2","doi-asserted-by":"crossref","unstructured":"M.Lanzoni P.Olivo B.Ricco:A testing technique to characierize E2PROM'S aging and endurance. IEEE ITC '89 1989 p.391.","DOI":"10.1109\/TEST.1989.82323"}],"container-title":["European Transactions on Telecommunications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fett.4460010220","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/ett.4460010220","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,1,31]],"date-time":"2025-01-31T22:33:54Z","timestamp":1738362834000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/ett.4460010220"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1990,3]]},"references-count":7,"journal-issue":{"issue":"2","published-print":{"date-parts":[[1990,3]]}},"alternative-id":["10.1002\/ett.4460010220"],"URL":"https:\/\/doi.org\/10.1002\/ett.4460010220","archive":["Portico"],"relation":{},"ISSN":["1124-318X","1541-8251"],"issn-type":[{"type":"print","value":"1124-318X"},{"type":"electronic","value":"1541-8251"}],"subject":[],"published":{"date-parts":[[1990,3]]}}}