{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,10,23]],"date-time":"2023-10-23T07:40:02Z","timestamp":1698046802972},"reference-count":11,"publisher":"Wiley","issue":"3","license":[{"start":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T00:00:00Z","timestamp":1221177600000},"content-version":"vor","delay-in-days":6709,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Trans Emerging Tel Tech"],"published-print":{"date-parts":[[1990,5]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>State of\u2010the\u2010art semiconductor devices are characterized nowadays by dimensions which are well into the submicron range. As a result, the physical models describing carrier transport in these devices need to be modified to be able to account for phenomena such as hot electron or quantum effects, which are intrinsic to this size regime. In this paper we present a formalism which, starting from a self\u2010consistent solution of Schrodinger's and Poisson's equations in terms. of semi\u2010analytical wavefunctions, leads to a system of quantum balance equations. It is expected that, as well as supplying a more accurate description of the abovementioned effects, the resulting models will not be computationally expensive and therefore amenable to implementation in a device simulator.<\/jats:p>","DOI":"10.1002\/ett.4460010313","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T13:05:22Z","timestamp":1221224722000},"page":"313-317","source":"Crossref","is-referenced-by-count":0,"title":["Carrier transport modelling in the inversion layer of submicron semiconductor devices"],"prefix":"10.1002","volume":"1","author":[{"given":"Cristiano","family":"Sala","sequence":"first","affiliation":[]},{"given":"Wim","family":"Magnus","sequence":"additional","affiliation":[]},{"given":"Kristin","family":"De Meyer","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1016\/0021-9991(70)90004-5"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.340963"},{"key":"e_1_2_1_4_2","first-page":"465","article-title":"Electronic properties of two\u2010dimensional systems","volume":"2","author":"Ando T.","year":"1982","journal-title":"Rev. Mod. Phys."},{"key":"e_1_2_1_5_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.32.1112"},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.335945"},{"key":"e_1_2_1_7_2","unstructured":"W.Magnus C.Sala K.De Meyer:On the electron density correlation function of the 2DEG in A lGaAs\/GaAs heterojunctions. Unpublished."},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1016\/S0080-8784(08)62376-5"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.27.563"},{"key":"e_1_2_1_10_2","doi-asserted-by":"publisher","DOI":"10.2307\/2003468"},{"key":"e_1_2_1_11_2","first-page":"340","volume-title":"Table of Integrals, Series and Products","author":"Gradshteyn I. S.","year":"1980"},{"key":"e_1_2_1_12_2","unstructured":"The NAG Fortran Library Manual \u2010 Mark 12. First edition vol. 1 1987."}],"container-title":["European Transactions on Telecommunications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fett.4460010313","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/ett.4460010313","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,22]],"date-time":"2023-10-22T13:27:47Z","timestamp":1697981267000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/ett.4460010313"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1990,5]]},"references-count":11,"journal-issue":{"issue":"3","published-print":{"date-parts":[[1990,5]]}},"alternative-id":["10.1002\/ett.4460010313"],"URL":"https:\/\/doi.org\/10.1002\/ett.4460010313","archive":["Portico"],"relation":{},"ISSN":["1124-318X","1541-8251"],"issn-type":[{"value":"1124-318X","type":"print"},{"value":"1541-8251","type":"electronic"}],"subject":[],"published":{"date-parts":[[1990,5]]}}}