{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,1]],"date-time":"2025-02-01T05:30:43Z","timestamp":1738387843335,"version":"3.35.0"},"reference-count":13,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T00:00:00Z","timestamp":1221177600000},"content-version":"vor","delay-in-days":6648,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Trans Emerging Tel Tech"],"published-print":{"date-parts":[[1990,7]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>A physical model of a gallium arsenide MESFET, based on an improved quasi\u2010two\u2010dimensional description of the transport in the device is presented. The formulation of the model includes a comprehensive treatment of the doping profile and allows sharp variations in the profile to be reflected in the device characteristics, unlike previously published models. The model is applied to the dc and microwave characterisation of MESFETs and microwave power amplifiers. Comparison with a wide range of measured data has permitted the validation of the models for a variety of small\u2010signal and power devices.<\/jats:p>","DOI":"10.1002\/ett.4460010404","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T13:08:29Z","timestamp":1221224909000},"page":"383-388","source":"Crossref","is-referenced-by-count":1,"title":["Quasi\u2010two dimensional MESFET models application and validation"],"prefix":"10.1002","volume":"1","author":[{"given":"Christopher M.","family":"Snowden","sequence":"first","affiliation":[]},{"given":"Renato R.","family":"Pantoja","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.1978.1129538"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1981.20306"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.327292"},{"key":"e_1_2_1_5_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1981.20466"},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1982.20816"},{"key":"e_1_2_1_7_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1987.22909"},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1987.23034"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.34213"},{"key":"e_1_2_1_10_2","doi-asserted-by":"publisher","DOI":"10.1109\/22.44119"},{"key":"e_1_2_1_11_2","doi-asserted-by":"crossref","unstructured":"R. R.Pantoja M. J.Howes J. R.Richardson C. M.Snowden:The Design of Microwave Subsystems based on Physical Device Model. Proc. IEEE Int. Svmp. Circuits Svst. (Finland). June1988 p.2065\u20132068.","DOI":"10.1109\/ISCAS.1988.15347"},{"key":"e_1_2_1_12_2","doi-asserted-by":"crossref","unstructured":"C. M.Snowden:Practical Methods of Device and Circuit Modeling. Proc. IEEE Int. Circuits and Sys. Symposium Finland 1988 p.2279\u20132282.","DOI":"10.1109\/ISCAS.1988.15399"},{"key":"e_1_2_1_13_2","doi-asserted-by":"publisher","DOI":"10.1109\/22.40992"},{"key":"e_1_2_1_14_2","unstructured":"R. R.Pantoja:Computer Aided Modelling and Characterization of MESFET Devices and Circuits. PhD Thesis University of Leeds June1990."}],"container-title":["European Transactions on Telecommunications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fett.4460010404","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/ett.4460010404","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,1,31]],"date-time":"2025-01-31T22:34:10Z","timestamp":1738362850000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/ett.4460010404"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1990,7]]},"references-count":13,"journal-issue":{"issue":"4","published-print":{"date-parts":[[1990,7]]}},"alternative-id":["10.1002\/ett.4460010404"],"URL":"https:\/\/doi.org\/10.1002\/ett.4460010404","archive":["Portico"],"relation":{},"ISSN":["1124-318X","1541-8251"],"issn-type":[{"type":"print","value":"1124-318X"},{"type":"electronic","value":"1541-8251"}],"subject":[],"published":{"date-parts":[[1990,7]]}}}