{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,10,23]],"date-time":"2023-10-23T04:59:22Z","timestamp":1698037162148},"reference-count":13,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T00:00:00Z","timestamp":1221177600000},"content-version":"vor","delay-in-days":6648,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Trans Emerging Tel Tech"],"published-print":{"date-parts":[[1990,7]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Surface effects in planar submicron GaAs MESFET are investigated in detail by use of a quasi twodimensional model taking into account the nonstationary transport effects in the channel which are very important for simulation of submicron structures. The model explains the transconductance compression in submicron MESFET due to the influence of the free surface in the parasitic gate\u2010source and gate\u2010drain region. The dependence of device performance on the surface potential is shown.<\/jats:p>","DOI":"10.1002\/ett.4460010405","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T13:10:30Z","timestamp":1221225030000},"page":"389-392","source":"Crossref","is-referenced-by-count":2,"title":["Simulation of surface effects in planar GaAs MESFET structures by use of a quasi\u20102D model"],"prefix":"10.1002","volume":"1","author":[{"given":"Wolfgang","family":"Brockerhoff","sequence":"first","affiliation":[]},{"given":"Michael","family":"Versteegen","sequence":"additional","affiliation":[]},{"given":"Ralf","family":"Bertenburg","sequence":"additional","affiliation":[]},{"given":"Ulrich","family":"Seiler","sequence":"additional","affiliation":[]},{"given":"Klaus","family":"Heime","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1049\/el:19880525"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1984.21656"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1116\/1.570583"},{"issue":"10","key":"e_1_2_1_5_2","article-title":"Transconductance compression in sub\u2010micrometer GaAs MESFETS","volume":"4","author":"Chen C. L.","year":"1983","journal-title":"IEEE Electron Device Letters"},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.2543"},{"issue":"12","key":"e_1_2_1_7_2","doi-asserted-by":"crossref","DOI":"10.1109\/T-ED.1983.21439","article-title":"New modeling of CaAs MSFET's","volume":"30","author":"Hariu T.","year":"1983","journal-title":"IEEE Transactions on Electron Devices"},{"issue":"11","key":"e_1_2_1_8_2","article-title":"Current\u2010voltage characteristics of ungated GaAs FET's","volume":"32","author":"Baek J.","year":"1985","journal-title":"IEEE Transactions on Electron Devices"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(86)90183-8"},{"issue":"10","key":"e_1_2_1_10_2","article-title":"Analysis of capacitance and transconductance frequency dispersion in MESFETs for surface characterization","volume":"29","author":"Graffeuil J.","year":"1986","journal-title":"Solid\u2010State Electron\u2010ics"},{"key":"e_1_2_1_11_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.3332"},{"key":"e_1_2_1_12_2","unstructured":"E.Constant:Modelling of sub\u2010micron devices. Inst. Phys. Conf. ser. n. 57 1981 p.141\u2013168."},{"key":"e_1_2_1_13_2","unstructured":"U.Seiler:lonenimplantierte MESFET's mil Kan\u00e4len hoher Elek\u2010tronenkonzentration. Ph. D. dissertation University of Duis\u2010burg. Germany 1989."},{"key":"e_1_2_1_14_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.327292"}],"container-title":["European Transactions on Telecommunications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fett.4460010405","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/ett.4460010405","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,22]],"date-time":"2023-10-22T20:04:17Z","timestamp":1698005057000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/ett.4460010405"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1990,7]]},"references-count":13,"journal-issue":{"issue":"4","published-print":{"date-parts":[[1990,7]]}},"alternative-id":["10.1002\/ett.4460010405"],"URL":"https:\/\/doi.org\/10.1002\/ett.4460010405","archive":["Portico"],"relation":{},"ISSN":["1124-318X","1541-8251"],"issn-type":[{"value":"1124-318X","type":"print"},{"value":"1541-8251","type":"electronic"}],"subject":[],"published":{"date-parts":[[1990,7]]}}}