{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,10,23]],"date-time":"2023-10-23T07:40:01Z","timestamp":1698046801871},"reference-count":21,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T00:00:00Z","timestamp":1221177600000},"content-version":"vor","delay-in-days":6648,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Trans Emerging Tel Tech"],"published-print":{"date-parts":[[1990,7]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>A transient two\u2010dimensional hydrodynamic device simulator is presented that allows an accurate modelling of charge transport in unipolar devices made of multiple valley semiconductor material. Carrier energy balance is included to account fon non\u2010equilibrium transport with emphasis on heat transport by convection, which is normally not considered by GaAs device simulators. The transport model allows investigation of realistic GaAs MESFET's fabricated by ion\u2010implantation with gate lengths down to 0.2 \u03bcm and high channel doping.<\/jats:p><jats:p>The causes of various short channel effects, namely threshold voltage variation and trans\u2010conductance compression are examined. It is shown that poor pinch\u2010off behaviour of devices with short gates has its origins much more in drain induced barrier lowering than in substrate conduction. As drain current increases with shorter gate length it could be expected that trans\u2010conductance would also be higher because of the larger amount of current that can be controlled by the gate. Instead, lower transconductance at zero gate bias is observed experimentally. It is known that this phenomenon can be attributed to surface depletion effects. TO test this hypothesis, a simple model for a uniform surface charge density has been included in the sirnulator. First results are in good agreement to measured dc\u2010parameters. Simulation also indicates that the channel narrowing due to surface depletion leads to travelling domain oscillations that are visible in the terminal currents.<\/jats:p>","DOI":"10.1002\/ett.4460010407","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T13:09:16Z","timestamp":1221224956000},"page":"401-409","source":"Crossref","is-referenced-by-count":0,"title":["Simulation of short\u2010channel and surface effects in submicron GaAs MESFETs"],"prefix":"10.1002","volume":"1","author":[{"given":"Rainer","family":"Makowitz","sequence":"first","affiliation":[]},{"given":"Wolfgang","family":"Brockerhoff","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1016\/0045-7825(72)90019-9"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1982.20816"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(87)90224-3"},{"key":"e_1_2_1_5_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1987.22909"},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.2574"},{"key":"e_1_2_1_7_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.3332"},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1970.16921"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1969.16566"},{"key":"e_1_2_1_10_2","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-7091-8752-4"},{"key":"e_1_2_1_11_2","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(89)90301-8"},{"key":"e_1_2_1_12_2","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(85)90100-5"},{"key":"e_1_2_1_13_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.328423"},{"key":"e_1_2_1_14_2","doi-asserted-by":"publisher","DOI":"10.1049\/el:19760470"},{"key":"e_1_2_1_15_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.327292"},{"key":"e_1_2_1_16_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.30929"},{"key":"e_1_2_1_17_2","volume-title":"Matrix iterative analysis","author":"Varga R. S.","year":"1962"},{"key":"e_1_2_1_18_2","unstructured":"A.Gnudi M.Rudan G.Baccarani:Numerical aspects and implemenration schemes in device simulators based on higher\u2010order models. In: 5th Meeting GaAs Simulation Group Turin 1989."},{"key":"e_1_2_1_19_2","unstructured":"U.Seiler:Ionenimplantierte MESFET's mil Kan\u00e4len hoher Elek\u2010tronenkonzentration.1989. Dissertation University of Duisburg."},{"key":"e_1_2_1_20_2","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-663-05668-3"},{"key":"e_1_2_1_21_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1984.21656"},{"key":"e_1_2_1_22_2","doi-asserted-by":"publisher","DOI":"10.1109\/EDL.1982.25546"}],"container-title":["European Transactions on Telecommunications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fett.4460010407","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/ett.4460010407","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,22]],"date-time":"2023-10-22T20:03:32Z","timestamp":1698005012000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/ett.4460010407"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1990,7]]},"references-count":21,"journal-issue":{"issue":"4","published-print":{"date-parts":[[1990,7]]}},"alternative-id":["10.1002\/ett.4460010407"],"URL":"https:\/\/doi.org\/10.1002\/ett.4460010407","archive":["Portico"],"relation":{},"ISSN":["1124-318X","1541-8251"],"issn-type":[{"value":"1124-318X","type":"print"},{"value":"1541-8251","type":"electronic"}],"subject":[],"published":{"date-parts":[[1990,7]]}}}