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The numerical implementation of the model is discussed, and it is shown how numerical ill\u2010conditioning problems suggest the implementation of a full two\u2010carrier model for the simulation of devices with un\u2010depleted<jats:italic>p<\/jats:italic>\u2010type substrates. A discussion is presented on the interpretation of rate\u2010dependent anomalies related to the frequency behaviour of the small\u2010signal parameters, and the importance of simulating a backgate electrode is stressed. Finally, comparisons are given with ac and dc data measured on<jats:italic>p<\/jats:italic>\u2010buried layer Siemens devices.<\/jats:p>","DOI":"10.1002\/ett.4460010408","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T13:09:16Z","timestamp":1221224956000},"page":"411-419","source":"Crossref","is-referenced-by-count":1,"title":["An extended majority\u2010carrier approach for the DC and small\u2010signal simulation of ion\u2010implanted mesfets on compensated and p\u2010type substrates"],"prefix":"10.1002","volume":"1","author":[{"given":"Giovanni","family":"Ghione","sequence":"first","affiliation":[]},{"given":"Augusto","family":"Benvenuti","sequence":"additional","affiliation":[]},{"given":"Marco","family":"Pirola","sequence":"additional","affiliation":[]},{"given":"Carlo","family":"Naldi","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"crossref","unstructured":"R.Anholt T. 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