{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,1]],"date-time":"2025-02-01T05:30:22Z","timestamp":1738387822075,"version":"3.35.0"},"reference-count":20,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T00:00:00Z","timestamp":1221177600000},"content-version":"vor","delay-in-days":6648,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Trans Emerging Tel Tech"],"published-print":{"date-parts":[[1990,7]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>A study of the variations of the small signal parameters of subhalf\u2010micron\u2010gate Het\u2010erostructure Field Effect Transistors HFETs with device scaling (aspect ratio), gate offset in the recessed zone and hot\u2010carrier confinement by buffer barriers is carried out for the sake of optimizing sumicron HFET structures for 40\u2013100 GHz applications. We discuss the performance limits of existing structures and investigate new concepts and approaches to circumvent these limitations based on thorough understanding of device physics gained from 2D energy modeling. We project a net improvement in HFET millimetric performance using subhalf\u2010micron\u2010gate pseudomorphic structures which we expect to have maximum oscillation frequencies in excess of 400 GHz in the near future.<\/jats:p>","DOI":"10.1002\/ett.4460010409","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T13:08:12Z","timestamp":1221224892000},"page":"421-428","source":"Crossref","is-referenced-by-count":3,"title":["Structural optimization of millimeter\u2010wave subhalf\u2010micron gate MODFETs"],"prefix":"10.1002","volume":"1","author":[{"given":"Tarek","family":"Shawki","sequence":"first","affiliation":[]},{"given":"Georges","family":"Salmer","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1109\/22.32210"},{"key":"e_1_2_1_3_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.40911"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.40905"},{"key":"e_1_2_1_5_2","unstructured":"For the state of the art MMIC applications based of HFETs and HBTs:Digest of papers theIEEE 1990 Microwave and Millimeter Wave Monolithic Circuit Symposium edited by Ho\u2010Chung Huang Dallas (Texas) May1990."},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.33.5595"},{"key":"e_1_2_1_7_2","doi-asserted-by":"crossref","first-page":"677","DOI":"10.1109\/T-ED.1986.22551","article-title":"MODFET ensemble Monte\u2010Carlo model including the quasi\u2010two\u2010dimensional electron gas","volume":"33","author":"Ravaioli U.","journal-title":"IEEE Trans. Electron Devices"},{"key":"e_1_2_1_8_2","unstructured":"T.Shawki G.Salmer O.El\u2010Sayed:Two dimensional transient simulation of submicron\u2010gate MODFETs. Int. Phys. Conf. Ser. n. 91. Chapter 7 1988 p.749\u2013752."},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.43796"},{"key":"e_1_2_1_10_2","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(88)90286-9"},{"key":"e_1_2_1_11_2","unstructured":"T.Shawki G.Salmer:Computer\u2010aided analysis and optimization of subhalf micron\u2010gate MODFET structures. 1990 IEEE MTT\u2010S International Microwave Symposium Dallas (Texas) May 8\u201310 1990."},{"key":"e_1_2_1_12_2","unstructured":"T.Shawki G.Salmer:Analysis and optimization of single ouantum well MODFETs. Proceedings of the Gallium Arcenide Application Symposium (GUS 90);April 19\u201320 1990. Roma (Italy).1990 p.215\u2013220."},{"key":"e_1_2_1_13_2","unstructured":"T.Shawki G.Salmer O. L.El\u2010Sayed:2D simulation of degenerate hot electron transport in MODFETs including DX\u2010center trapping. To be published in IEEE Trans CAD of ICAS. special issue on Third International Conference on Simulation of Semiconductor Devices and Processes (SISDEP\u201088). Bologna (Italy)."},{"key":"e_1_2_1_14_2","first-page":"194","volume-title":"Matrix iterative analysis","author":"Varga R. S.","year":"1962"},{"key":"e_1_2_1_15_2","doi-asserted-by":"publisher","DOI":"10.1137\/0705044"},{"key":"e_1_2_1_16_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1985.21902"},{"key":"e_1_2_1_17_2","doi-asserted-by":"crossref","unstructured":"L. F.Lester P. M.Smith P.\u2010Ho P. C.Chao R. C.Tiberio K. H. G.Duh E. D.Wolf:0.15 \u03bcm gate\u2010length double recess pseudomorphic HEMT with fmaxof 350 GHz. IEDM 88 p.172\u2013175.","DOI":"10.1109\/IEDM.1988.32782"},{"key":"e_1_2_1_18_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.102780"},{"key":"e_1_2_1_19_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.3339"},{"key":"e_1_2_1_20_2","unstructured":"The formulae used in creating this figure are found inJ.Alam\u2010kan H.Happy A.Cappy.Self consistent modeling of pseudomorphic AlGaAs\u2010GaInAs\u2010AIGaAs layers. This issue."},{"key":"e_1_2_1_21_2","unstructured":"T.Shawki:On the detrimental effects of DX centers on submicron\u2010gate MODFET performances at 3W K. Private Communications."}],"container-title":["European Transactions on Telecommunications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fett.4460010409","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/ett.4460010409","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,1,31]],"date-time":"2025-01-31T22:34:19Z","timestamp":1738362859000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/ett.4460010409"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1990,7]]},"references-count":20,"journal-issue":{"issue":"4","published-print":{"date-parts":[[1990,7]]}},"alternative-id":["10.1002\/ett.4460010409"],"URL":"https:\/\/doi.org\/10.1002\/ett.4460010409","archive":["Portico"],"relation":{},"ISSN":["1124-318X","1541-8251"],"issn-type":[{"type":"print","value":"1124-318X"},{"type":"electronic","value":"1541-8251"}],"subject":[],"published":{"date-parts":[[1990,7]]}}}