{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,10,23]],"date-time":"2023-10-23T04:57:05Z","timestamp":1698037025238},"reference-count":5,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T00:00:00Z","timestamp":1221177600000},"content-version":"vor","delay-in-days":6648,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Trans Emerging Tel Tech"],"published-print":{"date-parts":[[1990,7]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>The two\u2010dimensional device simulator PRISM (PRogram for Investigating Semiconductor Models) [1], which is a general purpose device simulator, has been adapted to simulate III\u2010V heterojunction FET's [2]. PRISM can now simulate silicon devices (as MOSFET's, bipolar transistors, SO1 structures, etc.,), GaAs MESFET's, Schottky diodes and AIGaAsl GaAs HEMT's.<\/jats:p><jats:p>The program makes use of the finite element method to solve the Poisson equation and the finite boxes method to solve the continuity equations for electrons and holes. There is also an ongoing effort to implement the heat transport equation [3]. The finite element method has rarely been used in HEMT\u2010simulations. The main advantages of this method are the flexibility in defining sloped device contours and the possibilic to refine the mesh only locally, so that the number of nodes only increases moderately, as opposed to the situation with finite difference simulators. This advantage is very usefull for HEMT's were the thin AlGaAs\/GaAs heterojunction region ( 40 nm) has to be simulated accurately compared to the bulk region.<\/jats:p><jats:p>Simulations of AlGaAslGaAs HEMT's have been performed, and comparisons with measurements on HEMT's [4] processed in IMEC have been made. The simulated I\u2010V characteristics and the transconductance curves agree very well. Also sheet concentrations and band diagrams can be extracted from the simulation results.<\/jats:p>","DOI":"10.1002\/ett.4460010411","type":"journal-article","created":{"date-parts":[[2008,9,12]],"date-time":"2008-09-12T13:11:17Z","timestamp":1221225077000},"page":"433-437","source":"Crossref","is-referenced-by-count":2,"title":["AlGaAs\/GaAs: High electron mobility transistor simulations with PRISM"],"prefix":"10.1002","volume":"1","author":[{"given":"Philippe","family":"Jansen","sequence":"first","affiliation":[]},{"given":"N.","family":"Maene","sequence":"additional","affiliation":[]},{"given":"Walter De","family":"Raedt","sequence":"additional","affiliation":[]},{"given":"S.","family":"Naten","sequence":"additional","affiliation":[]},{"given":"D.","family":"Stubbe","sequence":"additional","affiliation":[]},{"given":"Wim","family":"Schoenmaker","sequence":"additional","affiliation":[]},{"given":"M.","family":"Van Rossum","sequence":"additional","affiliation":[]},{"given":"K.","family":"De Meyer","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2008,9,12]]},"reference":[{"key":"e_1_2_1_2_2","unstructured":"S.Edwards:Adaptive meshing and the development of a novel robust alorithm for accurate numerical simulation of semiconductor devices. Ph.D. University of Leuven Belgium1988."},{"key":"e_1_2_1_3_2","unstructured":"S.Naten D.Stubbe:Computersimulatie van A\/GaAs\/GaAs heterojunctie FET's. Master's Thesis University of Leuven Belgium1989."},{"key":"e_1_2_1_4_2","unstructured":"W.Schoenmaker:Inclusion of the heat equation in the device simulator PRISM. Nasecode VI \u2010 Lecture notes of the Short Course and Digest of the Software Forum held in Dublin Ireland from 10th to 12th July1989."},{"key":"e_1_2_1_5_2","unstructured":"Ph.Jansen:Jaarverslag 1988\u201389: Studie van GaAs veld\u2010effect transistoren met sub\u20100.25 micron gatelengte. Yearly report for the IWONL Belgium."},{"key":"e_1_2_1_6_2","doi-asserted-by":"crossref","unstructured":"A.De Mari:An accurate numerical steady state one dimensional solution of the pn\u2010junction. Solid State Electron 11 1968 p.33\u201358.","DOI":"10.1016\/0038-1101(68)90137-8"}],"container-title":["European Transactions on Telecommunications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fett.4460010411","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/ett.4460010411","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,22]],"date-time":"2023-10-22T20:03:40Z","timestamp":1698005020000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/ett.4460010411"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1990,7]]},"references-count":5,"journal-issue":{"issue":"4","published-print":{"date-parts":[[1990,7]]}},"alternative-id":["10.1002\/ett.4460010411"],"URL":"https:\/\/doi.org\/10.1002\/ett.4460010411","archive":["Portico"],"relation":{},"ISSN":["1124-318X","1541-8251"],"issn-type":[{"value":"1124-318X","type":"print"},{"value":"1541-8251","type":"electronic"}],"subject":[],"published":{"date-parts":[[1990,7]]}}}