{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,13]],"date-time":"2026-09-13T04:46:06Z","timestamp":1789274766516,"version":"build-2803163510"},"reference-count":21,"publisher":"Wiley","issue":"1","license":[{"start":{"date-parts":[[2019,12,18]],"date-time":"2019-12-18T00:00:00Z","timestamp":1576627200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":["aapm.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["J Applied Clin Med Phys"],"published-print":{"date-parts":[[2020,1]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:sec><jats:title>Purpose<\/jats:title><jats:p>With the increasing use of MR\u2010guided radiation therapy (MRgRT), it becomes important to understand and explore accuracy of medical dosimeters in the presence of magnetic field. The purpose of this work is to characterize metal\u2010oxide\u2010semiconductor field\u2010effect transistors (MOSFETs) in MRgRT systems at 0.345\u00a0T magnetic field strength.<\/jats:p><\/jats:sec><jats:sec><jats:title>Methods<\/jats:title><jats:p>A MOSFET dosimetry system, developed by Best Medical Canada for <jats:italic>in\u2010vivo<\/jats:italic> patient dosimetry, was used to study various commissioning tests performed on a MRgRT system, MRIdian<jats:sup>\u00ae<\/jats:sup> Linac. We characterized the MOSFET dosimeter with different cable lengths by determining its calibration factor, monitor unit linearity, angular dependence, field size dependence, percentage depth dose (PDD) variation, output factor change, and intensity modulated radiation therapy quality assurance (IMRT QA) verification for several plans. MOSFET results were analyzed and compared with commissioning data and Monte Carlo calculations.<\/jats:p><\/jats:sec><jats:sec><jats:title>Results<\/jats:title><jats:p>MOSFET measurements were not found to be affected by the presence of 0.345\u00a0T magnetic field. Calibration factors were similar for different cable length dosimeters either placed at the parallel or perpendicular direction to the magnetic field, with variations of less than 2%. The detector showed good linearity (R<jats:sup>2<\/jats:sup>\u00a0=\u00a00.999) for 100\u2013600\u00a0MUs range. Output factor measurements were consistent with ionization chamber data within 2.2%. MOSFET PDD measurements were found to be within 1% for 1\u201315\u00a0cm depth range in comparison to ionization chamber. MOSFET normalized angular response matched thermoluminescent detector (TLD) response within 5.5%. The IMRT QA verification data for the MRgRT linac showed that the percentage difference between ionization chamber and MOSFET was 0.91%, 2.05%, and 2.63%, respectively for liver, spine, and mediastinum.<\/jats:p><\/jats:sec><jats:sec><jats:title>Conclusion<\/jats:title><jats:p>MOSFET dosimeters are not affected by the 0.345\u00a0T magnetic field in MRgRT system. They showed physics parameters and performance comparable to TLD and ionization chamber; thus, they constitute an alternative to TLD for real\u2010time <jats:italic>in\u2010vivo<\/jats:italic> dosimetry in MRgRT procedures.<\/jats:p><\/jats:sec>","DOI":"10.1002\/acm2.12799","type":"journal-article","created":{"date-parts":[[2019,12,19]],"date-time":"2019-12-19T06:51:00Z","timestamp":1576738260000},"page":"127-135","update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":10,"title":["MOSFET dosimeter characterization in MR\u2010guided radiation therapy (MRgRT) Linac"],"prefix":"10.1002","volume":"21","author":[{"given":"Poonam","family":"Yadav","sequence":"first","affiliation":[{"name":"Department of Human Oncology University of Wisconsin\u2010Madison Madison WI USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Abdelbasset","family":"Hallil","sequence":"additional","affiliation":[{"name":"Best Medical Canada Ottawa ON Canada"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dinesh","family":"Tewatia","sequence":"additional","affiliation":[{"name":"Department of Human Oncology University of Wisconsin\u2010Madison Madison WI USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"David A. P.","family":"Dunkerley","sequence":"additional","affiliation":[{"name":"Department of Human Oncology University of Wisconsin\u2010Madison Madison WI USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bhudatt","family":"Paliwal","sequence":"additional","affiliation":[{"name":"Department of Human Oncology University of Wisconsin\u2010Madison Madison WI USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2019,12,18]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.semradonc.2014.02.008"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.ijrobp.2017.10.020"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1088\/0031-9155\/59\/20\/R303"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1118\/1.1626989"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1088\/0031-9155\/49\/17\/014"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1118\/1.1481520"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1118\/1.1785452"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1118\/1.597314"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1120\/jacmp.v9i3.2798"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1051\/rphysap:0198300180208700"},{"key":"e_1_2_8_12_1","doi-asserted-by":"crossref","unstructured":"H\u00e9brardL NguyenDV VogelD et al.On the influence of strong magnetic field on MOS transistors. 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