{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,29]],"date-time":"2026-09-29T11:19:43Z","timestamp":1790680783489,"version":"4.1.0"},"reference-count":211,"publisher":"Wiley","issue":"39","license":[{"start":{"date-parts":[[2022,8,29]],"date-time":"2022-08-29T00:00:00Z","timestamp":1661731200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"published-print":{"date-parts":[[2022,9]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is generated at the 2DM\u2010metal interfaces, which induces metal\u2010induced gap states that are responsible for an uncontrollable Schottky barrier (SB), Fermi\u2010level pinning (FLP), and high contact resistance (<jats:italic>R<\/jats:italic><jats:sub>C<\/jats:sub>), thereby substantially lowering the electronic mobility of 2DM\u2010based devices. Here, vdW\u2010gap\u2010free 1D edge contact is reviewed for use in 2D devices with substantially suppressed carrier scattering of 2DMs with hexagonal boron nitride (hBN) encapsulation. The 1D contact further enables uniform carrier transport across multilayered 2DM channels, high\u2010density transistor integration independent of scaling, and the fabrication of double\u2010gate transistors suitable for demonstrating unique quantum phenomena of 2DMs. The existing 1D contact methods are reviewed first. As a promising technology toward the large\u2010scale production of 2D devices, seamless lateral contacts are reviewed in detail. The electronic, optoelectronic, and quantum devices developed via 1D contacts are subsequently discussed. Finally, the challenges regarding the reliability of 1D contacts are addressed, followed by an outlook of 1D contact methods.<\/jats:p>","DOI":"10.1002\/adma.202202408","type":"journal-article","created":{"date-parts":[[2022,5,20]],"date-time":"2022-05-20T12:31:18Z","timestamp":1653049878000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":57,"title":["Recent Progress in 1D Contacts for 2D\u2010Material\u2010Based Devices"],"prefix":"10.1002","volume":"34","author":[{"given":"Min Sup","family":"Choi","sequence":"first","affiliation":[{"name":"SKKU Advanced Institute of Nano Technology Sungkyunkwan University  Suwon 16419 Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nasir","family":"Ali","sequence":"additional","affiliation":[{"name":"SKKU Advanced Institute of Nano Technology Sungkyunkwan University  Suwon 16419 Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tien 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