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In this work, a functional 3\u2010terminal SOT\u2010MRAM device is demonstrated by integrating the TI [(BiSb)\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>3<\/jats:sub>\n                    ] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. An ultralow switching current density of 1.5 \u00d7 10\n                    <jats:sup>5<\/jats:sup>\n                    \u00a0A\u00a0cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    is achieved in the TI\u2010pMTJ device at room temperature, which is 1\u20132 orders of magnitude lower than that in conventional heavy\u2013metals\u2010based systems, due to the high SOT efficiency\n                    <jats:italic>\u03b8<\/jats:italic>\n                    <jats:sub>SH<\/jats:sub>\n                    = 1.16 of (BiSb)\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>3<\/jats:sub>\n                    . Furthermore, all\u2010electrical field\u2010free writing is realized by the synergistic effect of a small spin\u2010transfer torque current during the SOT. The thermal stability factor (\u0394 = 66) shows the high retention time (&gt;10 years) of the TI\u2010pMTJ device. This work sheds light to the future low\u2010power, high\u2010density, and high\u2010endurance\/retention magnetic memory technology based on quantum materials.\n                  <\/jats:p>","DOI":"10.1002\/adma.202302350","type":"journal-article","created":{"date-parts":[[2023,5,4]],"date-time":"2023-05-04T15:43:43Z","timestamp":1683215023000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":49,"title":["Low\u2010Power and Field\u2010Free Perpendicular Magnetic Memory Driven by Topological Insulators"],"prefix":"10.1002","volume":"35","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3877-4744","authenticated-orcid":false,"given":"Baoshan","family":"Cui","sequence":"first","affiliation":[{"name":"Songshan Lake Materials Laboratory  Dongguan Guangdong 523808 China"},{"name":"Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 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