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Bi<jats:sub>1\u2212<jats:italic>x<\/jats:italic><\/jats:sub>Sb<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub> is a prominent topological insulator that has a high charge\u2010to\u2010spin conversion efficiency. However, the origin and magnitude of the SOTs induced by current\u2010injection in Bi<jats:sub>1\u2212<jats:italic>x<\/jats:italic><\/jats:sub>Sb<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub> remain controversial. Here, the investigation of the SOTs and spin Hall magnetoresistance resulting from charge\u2010to\u2010spin conversion in twin\u2010free epitaxial layers of Bi<jats:sub>0.9<\/jats:sub>Sb<jats:sub>0.1<\/jats:sub>(0001) coupled to FeCo are investigated, and compared with those of amorphous Bi<jats:sub>0.9<\/jats:sub>Sb<jats:sub>0.1<\/jats:sub>. A large charge\u2010to\u2010spin conversion efficiency of 1 in the first case and less than 0.1 in the second is found, confirming crystalline Bi<jats:sub>0.9<\/jats:sub>Sb<jats:sub>0.1<\/jats:sub> as a strong spin\u2010injector material. The SOTs and spin Hall magnetoresistance are independent of the direction of the electric current, indicating that charge\u2010to\u2010spin conversion in single\u2010crystal Bi<jats:sub>0.9<\/jats:sub>Sb<jats:sub>0.1<\/jats:sub>(0001) is isotropic despite the strong anisotropy of the topological surface states. Further, it is found that the damping\u2010like SOT has a non\u2010monotonic temperature dependence with a minimum at 20\u00a0K. By correlating the SOT with resistivity and weak antilocalization measurements, charge\u2013spin conversion is concluded to occur via thermally excited holes from the bulk states above 20\u00a0K, and conduction through the isotropic surface states with increasing spin polarization due to decreasing electron\u2013electron scattering below\u00a020\u00a0K.<\/jats:p>","DOI":"10.1002\/adma.202304905","type":"journal-article","created":{"date-parts":[[2023,8,12]],"date-time":"2023-08-12T00:44:42Z","timestamp":1691801082000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":23,"title":["Spin\u2013Orbit Torques and Spin Hall Magnetoresistance Generated by Twin\u2010Free and Amorphous Bi<sub>0.9<\/sub>Sb<sub>0.1<\/sub> Topological Insulator Films"],"prefix":"10.1002","volume":"35","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8186-5994","authenticated-orcid":false,"given":"Federico","family":"Binda","sequence":"first","affiliation":[{"name":"Department of Materials ETH Zurich CH\u20108093 Zurich Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Stefano","family":"Fedel","sequence":"additional","affiliation":[{"name":"Department of Materials ETH Zurich CH\u20108093 Zurich Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Santos Francisco","family":"Alvarado","sequence":"additional","affiliation":[{"name":"Department of Materials ETH Zurich CH\u20108093 Zurich Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8240-4206","authenticated-orcid":false,"given":"Paul","family":"No\u00ebl","sequence":"additional","affiliation":[{"name":"Department of Materials ETH Zurich CH\u20108093 Zurich Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0031-9217","authenticated-orcid":false,"given":"Pietro","family":"Gambardella","sequence":"additional","affiliation":[{"name":"Department of Materials ETH Zurich CH\u20108093 Zurich Switzerland"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2023,10,5]]},"reference":[{"key":"e_1_2_8_1_1","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.91.035004"},{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-0461-5"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-020-2061-y"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jmmm.2022.169692"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.101.036601"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2613"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1038\/nature10309"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1218197"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4753947"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2013.145"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.90.224427"},{"key":"e_1_2_8_12_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3522"},{"key":"e_1_2_8_13_1","doi-asserted-by":"publisher","DOI":"10.1038\/nphys1362"},{"key":"e_1_2_8_14_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2014.15"},{"key":"e_1_2_8_15_1","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.82.3045"},{"key":"e_1_2_8_16_1","doi-asserted-by":"publisher","DOI":"10.1201\/b19297"},{"key":"e_1_2_8_17_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.119.137204"},{"key":"e_1_2_8_18_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41563-018-0137-y"},{"key":"e_1_2_8_19_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aay2324"},{"key":"e_1_2_8_20_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aaw3415"},{"key":"e_1_2_8_21_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.0c01850"},{"key":"e_1_2_8_22_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.123.207205"},{"key":"e_1_2_8_23_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpclett.1c00378"},{"key":"e_1_2_8_24_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0048619"},{"key":"e_1_2_8_25_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201907661"},{"key":"e_1_2_8_26_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.103.224428"},{"key":"e_1_2_8_27_1","volume-title":"Chemistry of the Elements","author":"Greenwood N. 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