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However, their fabrication with large scale poses challenges due to high synthesis temperatures (&gt;500 \u00b0C) and difficulties in integrating them with standard complementary metal\u2010oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO\n                    <jats:sub>2<\/jats:sub>\n                    ) and silicon nitride (SiN\n                    <jats:italic>\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    ). Here, a seeded growth technique for crystallizing CrTe\n                    <jats:sub>2<\/jats:sub>\n                    films on amorphous SiN\n                    <jats:italic>\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    \/Si and SiO\n                    <jats:sub>2<\/jats:sub>\n                    \/Si substrates with a low thermal budget is presented. This fabrication process optimizes large\u2010scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo\u2010oersted, attributed to weak intergranular exchange coupling. Field\u2010driven N\u00e9el\u2010type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe\n                    <jats:sub>2<\/jats:sub>\n                    devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single\u2010crystalline counterparts. Current\u2010assisted magnetization switching, enabled by a substantial spin\u2013orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 \u00d7 \u200910\n                    <jats:sup>7<\/jats:sup>\n                    \u210f\/2e\u2009 \u03a9\u207b\u00b9\u2009 m\u207b\u00b9), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large\u2010scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.\n                  <\/jats:p>","DOI":"10.1002\/adma.202311591","type":"journal-article","created":{"date-parts":[[2024,3,1]],"date-time":"2024-03-01T08:19:13Z","timestamp":1709281153000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":19,"title":["Epitaxial Growth of Large\u2010Scale 2D CrTe\n                    <sub>2<\/sub>\n                    Films on Amorphous Silicon Wafers With Low Thermal Budget"],"prefix":"10.1002","volume":"36","author":[{"given":"Xiaoqian","family":"Zhang","sequence":"first","affiliation":[{"name":"Shenzhen Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and Technology  Shenzhen 518055 China"},{"name":"Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University  Nanjing 211189 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yue","family":"Li","sequence":"additional","affiliation":[{"name":"Materials Science Division Argonne National Laboratory  Lemont IL 60439 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qiangsheng","family":"Lu","sequence":"additional","affiliation":[{"name":"Department of Physics and Astronomy University of Missouri  Columbia MO 65211 USA"},{"name":"Material Science &amp; Technology Division Oak Ridge National Laboratory  Oak Ridge TN 37831 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xueqiang","family":"Xiang","sequence":"additional","affiliation":[{"name":"School of Microelectronics University of Science and Technology of China  Hefei 230026 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3856-0639","authenticated-orcid":false,"given":"Xiaozhen","family":"Sun","sequence":"additional","affiliation":[{"name":"School of Microelectronics University of Science and Technology of China  Hefei 230026 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chunli","family":"Tang","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering Auburn University  Auburn AL 36849 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2251-9482","authenticated-orcid":false,"given":"Muntasir","family":"Mahdi","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering Auburn University  Auburn AL 36849 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Clayton","family":"Conner","sequence":"additional","affiliation":[{"name":"Department of Physics and Astronomy University of Missouri  Columbia MO 65211 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jacob","family":"Cook","sequence":"additional","affiliation":[{"name":"Department of Physics and Astronomy University of Missouri  Columbia MO 65211 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuzan","family":"Xiong","sequence":"additional","affiliation":[{"name":"Department of Physics and Astronomy University of North Carolina at Chapel Hill  Chapel Hill NC 27599 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jerad","family":"Inman","sequence":"additional","affiliation":[{"name":"Department of Physics and Astronomy University of North Carolina at Chapel Hill  Chapel Hill NC 27599 USA"},{"name":"Department of Physics Oakland University Rochester MI 48309 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wencan","family":"Jin","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering Auburn University  Auburn AL 36849 USA"},{"name":"Department of Physics Auburn University  Auburn AL 36849 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chang","family":"Liu","sequence":"additional","affiliation":[{"name":"Shenzhen Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and Technology  Shenzhen 518055 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"PeiYu","family":"Cai","sequence":"additional","affiliation":[{"name":"Institute for Condensed Matter Physics and Complex Systems School of Physics and Astronomy The University of Edinburgh  Edinburgh EH9 3FD UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Elton J. 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