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However, the absence of exciton emission in the crucial telecom C\u2010band has constrained their practical applications. Here, this limitation is addressed by reporting exciton emission at 0.8\u00a0eV (1550\u00a0nm) in a chemically vapor\u2010deposited, strictly aligned MoTe\n                    <jats:sub>2<\/jats:sub>\n                    \/MoS\n                    <jats:sub>2<\/jats:sub>\n                    heterobilayer, resulting from the direct bandgap transitions of interlayer excitons as identified by momentum\u2013space imaging of their electrons and holes. The decay mechanisms dominated by direct radiative recombination ensure constant emission quantum yields, a basic demand for efficient excitonic devices. The atomically sharp interface enables the resolution of two narrowly\u2010splitter transitions induced by spin\u2013orbit coupling, further distinguished through the distinct Land\u00e9 g\u2010factors as the fingerprint of spin configurations. By electrical control, the double transitions coupling into opposite circularly\u2010polarized photon modes, preserve or reverse the helicities of the incident light with a degree of polarization up to 90%. The Stark effect tuning extends the emission energy range by over 150\u00a0meV (270\u00a0nm), covering the telecom C\u2010band. The findings provide a material platform for studying the excitonic complexes and significantly boost the application prospects of excitonic devices in silicon photonics and all\u2010optical telecommunications.\n                  <\/jats:p>","DOI":"10.1002\/adma.202404371","type":"journal-article","created":{"date-parts":[[2024,7,15]],"date-time":"2024-07-15T05:56:40Z","timestamp":1721023000000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["Infrared Interlayer Excitons in Twist\u2010Free MoTe\n                    <sub>2<\/sub>\n                    \/MoS\n                    <sub>2<\/sub>\n                    Heterobilayers"],"prefix":"10.1002","volume":"36","author":[{"given":"Qiankun","family":"Ju","sequence":"first","affiliation":[{"name":"CAS Key Laboratory of Design and Assembly of Functional Nanostructures Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences  Fuzhou Fujian 350002 P. 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