{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,19]],"date-time":"2026-09-19T01:15:55Z","timestamp":1789780555984,"version":"4.0.1"},"reference-count":59,"publisher":"Wiley","issue":"40","license":[{"start":{"date-parts":[[2024,8,19]],"date-time":"2024-08-19T00:00:00Z","timestamp":1724025600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62304021"],"award-info":[{"award-number":["62304021"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2023M740232"],"award-info":[{"award-number":["2023M740232"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Materials"],"published-print":{"date-parts":[[2024,10]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Sensitive, flexible, and low false alarm rate X\u2010ray detector is crucial for medical diagnosis, industrial inspection, and scientific research. However, most semiconductors for X\u2010ray detectors are susceptible to interference from ambient light, and their high thickness hinders their application in wearable electronics. Herein, a flexible visible\u2010blind and ultraviolet\u2010blind X\u2010ray detector based on Indium\u2010doped Gallium oxide (Ga\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    :In) single microwire is prepared. Joint experiment\u2212theory characterizations reveal that the Ga\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    :In microwire possess a high crystal quality, large band gap, and satisfactory stability, and reliability. On this basis, an extraordinary sensitivity of 5.9\u00a0\u00d7\u00a010\n                    <jats:sup>5<\/jats:sup>\n                    \u00a0\u00b5C\u00a0Gy\n                    <jats:sub>air<\/jats:sub>\n                    <jats:sup>\u22121<\/jats:sup>\n                    \u00a0cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    and a low detection limit of 67.4\u00a0nGy\n                    <jats:sub>air<\/jats:sub>\n                    \u00a0s\n                    <jats:sup>\u22121<\/jats:sup>\n                    are achieved based on the prepared Ag\/Ga\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    :In\/Ag device, which has outstanding operation stability and excellent high temperature stability. Taking advantage of the flexible properties of the single microwire, a portable X\u2010ray detection system is demonstrated that shows the potential to adapt to flexible and lightweight formats. The proposed X\u2010ray detection system enables real\u2010time monitor for X\u2010rays, which can be displayed on the user interface. More importantly, it has excellent resistance to natural light interference, showing a low false alarm rate. This work provides a feasible method for exploring high\u2010performance flexible integrated micro\/nano X\u2010ray detection devices.\n                  <\/jats:p>","DOI":"10.1002\/adma.202404656","type":"journal-article","created":{"date-parts":[[2024,8,19]],"date-time":"2024-08-19T04:28:49Z","timestamp":1724041729000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":46,"title":["Flexible Single Microwire X\u2010Ray Detector with Ultrahigh Sensitivity for Portable Radiation Detection System"],"prefix":"10.1002","volume":"36","author":[{"given":"Yancheng","family":"Chen","sequence":"first","affiliation":[{"name":"School of Integrated Circuits and Electronics Beijing Institute of Technology  Beijing 100081 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shifeng","family":"Niu","sequence":"additional","affiliation":[{"name":"School of Physics and Engineering Henan University of Science and Technology  Luoyang 471023 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ying","family":"Li","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits and Electronics Beijing Institute of Technology  Beijing 100081 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenjie","family":"Dou","sequence":"additional","affiliation":[{"name":"Henan Key Laboratory of Diamond Optoelectronic Material and Devices Key Laboratory of Material Physics Ministry of Education School of Physics and Microelectronics Zhengzhou University  Zhengzhou 450052 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xun","family":"Yang","sequence":"additional","affiliation":[{"name":"Henan Key Laboratory of Diamond Optoelectronic Material and Devices Key Laboratory of Material Physics Ministry of Education School of Physics and Microelectronics Zhengzhou University  Zhengzhou 450052 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