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However, generation of <jats:italic>z<\/jats:italic> spins is limited mainly to magnetically or crystallographically low\u2010symmetry single crystals that are hardly compatible with the integration to semiconductor circuits. This work reports efficient generation of <jats:italic>z<\/jats:italic> spins in sputter\u2010deposited polycrystalline heavy metal devices via a new mechanism of broken electric symmetries in both the transverse and perpendicular directions. Both the damping\u2010like and field\u2010like spin\u2013orbit torques of <jats:italic>z<\/jats:italic> spins can be tuned significantly by varying the degree of the electric asymmetries via the length, width, and thickness of devices as well as by varying the type of the heavy metals. The presence of <jats:italic>z<\/jats:italic> spins also enables deterministic, nearly\u2010full, external\u2010magnetic\u2010field\u2010free switching of a uniform perpendicularly magnetized FeCoB layer, the core structure of magnetic tunnel junctions, with high coercivity at a low current density. These results establish the first universal, energy\u2010efficient, integration\u2010friendly approach to generate <jats:italic>z<\/jats:italic>\u2010spin current by electric asymmetry design for dense and low\u2010power spin\u2010torque memory and computing technologies and will stimulate investigation of z\u2010spin currents in various polycrystalline materials.<\/jats:p>","DOI":"10.1002\/adma.202406552","type":"journal-article","created":{"date-parts":[[2024,8,22]],"date-time":"2024-08-22T02:55:05Z","timestamp":1724295305000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":18,"title":["Efficient Generation of Out\u2010of\u2010Plane Polarized Spin Current in Polycrystalline Heavy Metal Devices with Broken Electric Symmetries"],"prefix":"10.1002","volume":"36","author":[{"given":"Qianbiao","family":"Liu","sequence":"first","affiliation":[{"name":"State Key Laboratory of Superlattices and Microstructures Institute of 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