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Here, efficient SOT switching of a hard MTI, V\u2010doped (Bi,Sb)\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>3<\/jats:sub>\n                    (VBST), with a large coercive field that can prevent the influence of an external magnetic field, is demonstrated. A giant switched anomalous Hall resistance of 9.2 k\u03a9 is realized, among the largest of all SOT systems, which makes the Hall channel a good readout and eliminates the need to fabricate complicated magnetic tunnel junction (MTJ) structures. The SOT switching current density can be reduced to 2.8\u00a0\u00d7\u00a010\n                    <jats:sup>5\u00a0<\/jats:sup>\n                    A\n                    <jats:sup>\u00a0<\/jats:sup>\n                    cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    , indicating its high efficiency. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge\u2010state\u2010mediated to surface\u2010state\u2010mediated transport, thus enhancing the SOT effective field to (1.56\u00a0\u00b1\u00a00.12)\u00a0\u00d7\u00a010\n                    <jats:sup>\u22126\u00a0<\/jats:sup>\n                    T\n                    <jats:sup>\u00a0<\/jats:sup>\n                    A\n                    <jats:sup>\u22121\u00a0<\/jats:sup>\n                    cm\n                    <jats:sup>2<\/jats:sup>\n                    and the interfacial charge\u2010to\u2010spin conversion efficiency to 3.9\u00a0\u00b1\u00a00.3 nm\n                    <jats:sup>\u22121<\/jats:sup>\n                    . The findings establish VBST as an extraordinary candidate for energy\u2010efficient magnetic memory devices.\n                  <\/jats:p>","DOI":"10.1002\/adma.202406772","type":"journal-article","created":{"date-parts":[[2024,9,23]],"date-time":"2024-09-23T03:51:50Z","timestamp":1727063510000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":17,"title":["Giant Hall Switching by Surface\u2010State\u2010Mediated Spin\u2010Orbit Torque in a Hard Ferromagnetic Topological Insulator"],"prefix":"10.1002","volume":"36","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5144-7337","authenticated-orcid":false,"given":"Lixuan","family":"Tai","sequence":"first","affiliation":[{"name":"Department of Electrical and Computer Engineering University of California  Los Angeles CA 90095 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haoran","family":"He","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering University of California  Los Angeles CA 90095 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2016-9802","authenticated-orcid":false,"given":"Su Kong","family":"Chong","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering University of California  Los Angeles CA 90095 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Huairuo","family":"Zhang","sequence":"additional","affiliation":[{"name":"Theiss Research Inc. 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