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Here, magnetic field (<jats:italic>B<\/jats:italic>)\u2010induced giant electric hysteretic responses to back\u2010gate voltages are reported in ML\u2010MoS<jats:sub>2<\/jats:sub> field\u2010effect transistors (FETs) on SiO<jats:sub>2<\/jats:sub>\/Si at temperatures &lt;\u00a020 K. The observed hysteresis increases with |<jats:italic>B<\/jats:italic>| up to 12 T and is tunable by varying the temperature. Raman spectroscopic and scanning tunneling microscopic studies reveal significant lattice expansion with increasing |<jats:italic>B<\/jats:italic>| at 4.2 K, and this lattice expansion becomes asymmetric in ML\u2010MoS<jats:sub>2<\/jats:sub> FETs on rigid SiO<jats:sub>2<\/jats:sub>\/Si substrates, leading to out\u2010of\u2010plane mirror symmetry breaking and the emergence of a tunable out\u2010of\u2010plane ferroelectric\u2010like polar order. This broken symmetry\u2010induced polarization in ML\u2010MoS<jats:sub>2<\/jats:sub> shows typical ferroelectric butterfly hysteresis in piezo\u2010response force microscopy, adding ML\u2010MoS<jats:sub>2<\/jats:sub> to the single\u2010layer material family that exhibits out\u2010of\u2010plane polar order\u2010induced ferroelectricity, which is promising for such technological applications as cryo\u2010temperature ultracompact non\u2010volatile memories, memtransistors, and ultrasensitive magnetic field sensors. Moreover, the polar effect induced by asymmetric lattice expansion may be further generalized to other ML\u2010TMDs and achieved by nanoscale strain engineering of the substrate without magnetic fields.<\/jats:p>","DOI":"10.1002\/adma.202411393","type":"journal-article","created":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T08:16:15Z","timestamp":1730276175000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Magnetic Field\u2010Induced Polar Order in Monolayer Molybdenum Disulfide Transistors"],"prefix":"10.1002","volume":"36","author":[{"given":"Duxing","family":"Hao","sequence":"first","affiliation":[{"name":"Department of Physics California Institute of Technology  Pasadena CA 91125 USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wen\u2010Hao","family":"Chang","sequence":"additional","affiliation":[{"name":"Department of Physics National Taiwan Normal University  Taipei 116059 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